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author:

Yang, Qian (Yang, Qian.) [1] | Huang, Jinsong (Huang, Jinsong.) [2] | Chen, Qizhen (Chen, Qizhen.) [3] | Chen, Cihai (Chen, Cihai.) [4] | Chen, Huipeng (Chen, Huipeng.) [5] (Scholars:陈惠鹏) | Guo, Tailiang (Guo, Tailiang.) [6] (Scholars:郭太良)

Indexed by:

EI SCIE

Abstract:

Artificial synaptic transistors have shown great potential in artificial intelligence due to their low energy consumption, high scalability, similarity to biological neurons and precise regulation of channel conductance. A key step to achieving multifunctional synaptic transistors is to regulate synaptic weight in a fixed synaptic device using the same materials. However, the intrinsic properties of the films used for this purpose are affected by some uncertain factors, such as complicated processing and poor accuracy. Herein, a multifunctional synaptic transistor based on a thermo-denatured polar polymer material poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAMPSA) is reported. Typical synaptic characteristics such as excitatory post synaptic current (EPSC), paired pulse facilitation (PPF) and long term potentiation (LTP) were successfully simulated under different annealing temperatures. More importantly, we have demonstrated that the polarization degree of PAMPSA was directly influenced by the annealing temperatures, and that even small temperature changes (<20 degrees C) would allow a wide regulation range of synaptic weight, indicating that the synaptic weight can be modulated purposefully and precisely. Hence, this work provides a simple, convenient and accurate approach to regulate synaptic weight and the memory retention of an artificial synapse via modulation of the annealing temperature, which facilitates a wide simulation range of artificial synapses and the development of artificial neuromorphic devices.

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Community:

  • [ 1 ] [Yang, Qian]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 2 ] [Huang, Jinsong]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 3 ] [Chen, Qizhen]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 4 ] [Chen, Cihai]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 5 ] [Chen, Huipeng]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 6 ] [Guo, Tailiang]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 7 ] [Yang, Qian]Fuzhou Univ, Zhicheng Coll, Fuzhou 350002, Peoples R China
  • [ 8 ] [Yang, Qian]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China
  • [ 9 ] [Chen, Huipeng]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China
  • [ 10 ] [Guo, Tailiang]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China
  • [ 11 ] [Chen, Cihai]Minnan Normal Univ, Coll Phys & Informat Engn, Zhangzhou 363000, Peoples R China

Reprint 's Address:

  • 陈惠鹏

    [Chen, Huipeng]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China;;[Chen, Huipeng]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China

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Source :

JOURNAL OF MATERIALS CHEMISTRY C

ISSN: 2050-7526

Year: 2022

Issue: 14

Volume: 10

Page: 5534-5541

6 . 4

JCR@2022

5 . 7 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:91

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 6

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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