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author:

Yang, Qian (Yang, Qian.) [1] | Huang, Jinsong (Huang, Jinsong.) [2] | Chen, Qizhen (Chen, Qizhen.) [3] | Chen, Cihai (Chen, Cihai.) [4] | Chen, Huipeng (Chen, Huipeng.) [5] | Guo, Tailiang (Guo, Tailiang.) [6]

Indexed by:

EI

Abstract:

Artificial synaptic transistors have shown great potential in artificial intelligence due to their low energy consumption, high scalability, similarity to biological neurons and precise regulation of channel conductance. A key step to achieving multifunctional synaptic transistors is to regulate synaptic weight in a fixed synaptic device using the same materials. However, the intrinsic properties of the films used for this purpose are affected by some uncertain factors, such as complicated processing and poor accuracy. Herein, a multifunctional synaptic transistor based on a thermo-denatured polar polymer material poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAMPSA) is reported. Typical synaptic characteristics such as excitatory post synaptic current (EPSC), paired pulse facilitation (PPF) and long term potentiation (LTP) were successfully simulated under different annealing temperatures. More importantly, we have demonstrated that the polarization degree of PAMPSA was directly influenced by the annealing temperatures, and that even small temperature changes ( © 2022 The Royal Society of Chemistry

Keyword:

Annealing Energy utilization Transistors

Community:

  • [ 1 ] [Yang, Qian]Institute of Optoelectronic Display, Fuzhou University, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou; 350002, China
  • [ 2 ] [Yang, Qian]Zhicheng College, Fuzhou University, Fuzhou; 350002, China
  • [ 3 ] [Yang, Qian]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 4 ] [Huang, Jinsong]Institute of Optoelectronic Display, Fuzhou University, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou; 350002, China
  • [ 5 ] [Chen, Qizhen]Institute of Optoelectronic Display, Fuzhou University, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou; 350002, China
  • [ 6 ] [Chen, Cihai]Institute of Optoelectronic Display, Fuzhou University, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou; 350002, China
  • [ 7 ] [Chen, Cihai]College of Physics and Information Engineering, Minnan Normal University, Zhangzhou; 363000, China
  • [ 8 ] [Chen, Huipeng]Institute of Optoelectronic Display, Fuzhou University, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou; 350002, China
  • [ 9 ] [Chen, Huipeng]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 10 ] [Guo, Tailiang]Institute of Optoelectronic Display, Fuzhou University, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou; 350002, China
  • [ 11 ] [Guo, Tailiang]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China

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Source :

Journal of Materials Chemistry C

Year: 2022

Issue: 14

Volume: 10

Page: 5534-5541

6 . 4

JCR@2022

5 . 7 0 0

JCR@2023

ESI HC Threshold:91

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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