The　exploration　of　novel　photo/thermal-responsive　nonvolatile　memorizers　will　be　beneficial　for　energy-saving　memories.Herein,new＜110＞-oriented　perovskites　using　single　template　melamine,i.e.,[(MLAI-H2)(PbX4)]n(X=Br(α-1),Cl(α-2),MLAI=melamine)have　been　prepared　and　their　structures　upon　irra-diation　of　visible　light　have　been　investigated.They　have　been　fabricated　as　nonvolatile　memory　devices　with　structures　of　ITO/[(MLAI-H2)(PbX4)]n/PMMA/Ag(device-1:X=Br,device-2:X=Cl),which　can　ex-hibit　unique　visible　light-triggered　binary　nonvolatile　memory　performances.Interestingly,the　silent　or　working　status　can　be　monitored　by　visible　chromisms.Furthermore,the　light-triggered　binary　resistive　switching　mechanisms　of　these　ITO/[(MLAI-H2)(PbX4)]n/PMMA/Ag　memory　devices　have　been　clarified　in　terms　of　EPR,fluorescence,and　single-crystal　structural　analysis.The　presence　of　light-activated　traps　in＜110＞-oriented[(MLAI-H2)(PbX4)]n　perovskites　are　dominated　in　the　appearance　of　light-triggered　resis-tive　switching　behaviors,based　on　which　the　inverted　internal　electrical　fields　can　be　established.Ac-cording　to　the　structural　analysis,the　more　distorted　PbX6　octahedra,higher　corrugated＜110＞-oriented　perovskite　sheets,and　more　condensed　organic-inorganic　packing　in　Br-containing　perovskite　are　bene-ficial　for　the　stabilization　of　light-activated　traps,which　lead　to　the　better　resistive　switching　behavior　of　device-1.This　work　can　pave　a　new　avenue　for　the　establishment　of　novel　energy-saving　nonvolatile　memorizers　used　in　aerospace　or　military　industries.