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author:

Deng, Q. (Deng, Q..) [1] | Wen, J. (Wen, J..) [2] | An, X. (An, X..) [3] | Xie, Y. (Xie, Y..) [4] | Luo, J. (Luo, J..) [5] | Zhao, Z. (Zhao, Z..) [6] | Sa, B. (Sa, B..) [7] | Dong, H. (Dong, H..) [8] | Ang, R. (Ang, R..) [9]

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Scopus

Abstract:

The vast majority of research on PbTe thermoelectrics has focused merely on advancing medium-temperature power generator, often neglecting near-room-temperature thermoelectric properties, thus constraining its potential applications at low temperatures. Here, we realize the prominent improvement of the ratio of weighted mobility and lattice thermal conductivity in n-type PbTe thermoelectrics by manipulating the configurational entropy of the material. The severe lattice distortion induced by entropy increase causes a remarkable strain field, which powerfully scatters phonon and significantly lowers the lattice thermal conductivity. Simultaneously, entropy engineering effectively elevates the solubility limit of S in PbTe, which accelerates the flattening of the conduction band, leading to a larger Seebeck coefficient. As a result, we obtain an impressive near-room-temperature zT in the entropy-driven stabilized n-type PbTe. Based on this, we further fabricated a seven-pair thermoelectric module by integrating commercial p-type Bi2Te3, achieving a exceptional cooling temperature difference of 36.8 K at 300 K, and a maximum conversion efficiency of 3.2 % when the hot-side temperature is 540 K. Our present finding demonstrates promising thermoelectric applications for PbTe-based materials near room temperature. © 2025 Elsevier B.V.

Keyword:

Band flattening Configurational entropy n-Type PbTe Thermoelectrics

Community:

  • [ 1 ] [Deng Q.]Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu, 610064, China
  • [ 2 ] [Wen J.]Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 3 ] [An X.]Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu, 610064, China
  • [ 4 ] [Xie Y.]Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu, 610064, China
  • [ 5 ] [Luo J.]Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu, 610064, China
  • [ 6 ] [Zhao Z.]Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu, 610064, China
  • [ 7 ] [Sa B.]Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 8 ] [Dong H.]Center for High Pressure Science and Technology Advanced Research Shanghai, 201203, China
  • [ 9 ] [Ang R.]Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu, 610064, China
  • [ 10 ] [Ang R.]Institute of New Energy and Low-Carbon Technology, Sichuan University, Chengdu, 610065, China

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Source :

Chemical Engineering Journal

ISSN: 1385-8947

Year: 2025

Volume: 506

1 3 . 4 0 0

JCR@2023

CAS Journal Grade:1

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SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

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Chinese Cited Count:

30 Days PV: 0

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