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author:

Deng, Qian (Deng, Qian.) [1] | Wen, Jiansen (Wen, Jiansen.) [2] | An, Xiang (An, Xiang.) [3] | Xie, Yin (Xie, Yin.) [4] | Luo, Jiaxing (Luo, Jiaxing.) [5] | Zhao, Zhilong (Zhao, Zhilong.) [6] | Sa, Baisheng (Sa, Baisheng.) [7] (Scholars:萨百晟) | Dong, Hongliang (Dong, Hongliang.) [8] | Ang, Ran (Ang, Ran.) [9]

Indexed by:

EI Scopus SCIE

Abstract:

The vast majority of research on PbTe thermoelectrics has focused merely on advancing medium-temperature power generator, often neglecting near-room-temperature thermoelectric properties, thus constraining its potential applications at low temperatures. Here, we realize the prominent improvement of the ratio of weighted mobility and lattice thermal conductivity in n-type PbTe thermoelectrics by manipulating the configurational entropy of the material. The severe lattice distortion induced by entropy increase causes a remarkable strain field, which powerfully scatters phonon and significantly lowers the lattice thermal conductivity. Simultaneously, entropy engineering effectively elevates the solubility limit of S in PbTe, which accelerates the flattening of the conduction band, leading to a larger Seebeck coefficient. As a result, we obtain an impressive near-roomtemperature zT in the entropy-driven stabilized n-type PbTe. Based on this, we further fabricated a seven-pair thermoelectric module by integrating commercial p-type Bi2Te3, achieving a exceptional cooling temperature difference of 36.8 K at 300 K, and a maximum conversion efficiency of 3.2 % when the hot-side temperature is 540 K. Our present finding demonstrates promising thermoelectric applications for PbTe-based materials near room temperature.

Keyword:

Band flattening Configurational entropy n -Type PbTe Thermoelectrics

Community:

  • [ 1 ] [Deng, Qian]Sichuan Univ, Inst Nucl Sci & Technol, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China
  • [ 2 ] [An, Xiang]Sichuan Univ, Inst Nucl Sci & Technol, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China
  • [ 3 ] [Xie, Yin]Sichuan Univ, Inst Nucl Sci & Technol, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China
  • [ 4 ] [Luo, Jiaxing]Sichuan Univ, Inst Nucl Sci & Technol, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China
  • [ 5 ] [Zhao, Zhilong]Sichuan Univ, Inst Nucl Sci & Technol, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China
  • [ 6 ] [Dong, Hongliang]Sichuan Univ, Inst Nucl Sci & Technol, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China
  • [ 7 ] [Ang, Ran]Sichuan Univ, Inst Nucl Sci & Technol, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China
  • [ 8 ] [Wen, Jiansen]Fuzhou Univ, Sch Mat Sci & Engn, Multiscale Computat Mat Facil &, Fuzhou 350108, Peoples R China
  • [ 9 ] [Sa, Baisheng]Fuzhou Univ, Sch Mat Sci & Engn, Multiscale Computat Mat Facil &, Fuzhou 350108, Peoples R China
  • [ 10 ] [Wen, Jiansen]Fuzhou Univ, Mat Genome Inst, Sch Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 11 ] [Sa, Baisheng]Fuzhou Univ, Mat Genome Inst, Sch Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 12 ] [Dong, Hongliang]Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China
  • [ 13 ] [Ang, Ran]Sichuan Univ, Inst New Energy & Low Carbon Technol, Chengdu 610065, Peoples R China

Reprint 's Address:

  • [Dong, Hongliang]Sichuan Univ, Inst Nucl Sci & Technol, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China;;[Ang, Ran]Sichuan Univ, Inst Nucl Sci & Technol, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China

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Source :

CHEMICAL ENGINEERING JOURNAL

ISSN: 1385-8947

Year: 2025

Volume: 506

1 3 . 4 0 0

JCR@2023

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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