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author:

Qi, Qingchun (Qi, Qingchun.) [1] | Guo, Xiaotong (Guo, Xiaotong.) [2] | Zhu, Bili (Zhu, Bili.) [3] | Deng, Ping (Deng, Ping.) [4] (Scholars:邓平) | Zhan, Hongbing (Zhan, Hongbing.) [5] (Scholars:詹红兵) | Yang, Junliang (Yang, Junliang.) [6]

Indexed by:

EI Scopus SCIE

Abstract:

Development of n-type polymer semiconductor materials for all-polymer solar cells (all-PSCs) receives increasingly attention. A series of new n-type random terpolymers with identical perylene diimide-thiophene alternating copolymer backbone and different composition of the side chains 2-octyldodecanyl and 2-ethylhexanyl have been designed and applied as the acceptor materials in all-PSCs. The all-PSCs based on bulk heterojunction blends with side-chain engineered random terpolymer P(1/1) as acceptor and PTB7-Th as donor give a high power conversion efficiency value of 6.18% with an open-circuit voltage of 0.74 V, a short-circuit current density of 14.71 mA cm(-2), and a fill factor of 0.57. The results demonstrate that design of the poly(perylenediimide-altthiophene) random terpolymer acceptors via side-chain engineering is an alternative strategy for obtaining high-performance photovoltaic acceptor materials.

Keyword:

All-polymer solar cells n-type semiconductor poly(perylenediimide-alt-thiophene) Random terpolymer acceptor Side-chain engineering

Community:

  • [ 1 ] [Qi, Qingchun]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 2 ] [Zhu, Bili]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 3 ] [Deng, Ping]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 4 ] [Zhan, Hongbing]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 5 ] [Guo, Xiaotong]Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Hunan, Peoples R China
  • [ 6 ] [Yang, Junliang]Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Hunan, Peoples R China
  • [ 7 ] [Deng, Ping]Fujian Prov Univ, Fuzhou Univ, Key Lab Ecomat Adv Technol, Fuzhou 350108, Peoples R China
  • [ 8 ] [Zhan, Hongbing]Fujian Prov Univ, Fuzhou Univ, Key Lab Ecomat Adv Technol, Fuzhou 350108, Peoples R China

Reprint 's Address:

  • 邓平 詹红兵

    [Deng, Ping]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Fujian, Peoples R China;;[Yang, Junliang]Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Hunan, Peoples R China;;[Zhan, Hongbing]Fujian Prov Univ, Fuzhou Univ, Key Lab Ecomat Adv Technol, Fuzhou 350108, Peoples R China

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Source :

ORGANIC ELECTRONICS

ISSN: 1566-1199

Year: 2020

Volume: 78

2 . 7 0 0

JCR@2023

ESI Discipline: PHYSICS;

ESI HC Threshold:115

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 10

SCOPUS Cited Count: 10

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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