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author:

Liao, Tianjun (Liao, Tianjun.) [1] | Du, Jianying (Du, Jianying.) [2] | Guo, Juncheng (Guo, Juncheng.) [3] (Scholars:郭君诚) | Chen, Xiaohang (Chen, Xiaohang.) [4] | Chen, Jincan (Chen, Jincan.) [5]

Indexed by:

EI Scopus SCIE

Abstract:

A conceptual model of a Schottky junction (SJ)-based thermophotovoltaic-thermionic device (SJTTD) that can simultaneously convert thermally emitted electrons and photons into electricity is proposed, where the thermionic cell (TIC) is composed of a tungsten-based cathode and anode, and the thermophotovoltaic cell (TPVC) is made of a thermal emitter and an SJ. The thermal emitter simultaneously acts as the cathode of the TIC and the anode/p-type silicon interface forms the SJ. The impacts of space charge effect on the TIC and radiative recombination on the TPVC are taken into account. According to the theory of statistical physics, analytical expressions for the total power output density and energy conversion efficiency of the SJTTD are derived. The maximum power output density and efficiency are calculated numerically by optimizing the key parameters of the two subsystems. Further, the parametric optimum criteria are provided. The optimally operating states of the ideal and non-ideal SJTTDs are compared. The results show that selecting cathode materials with high emissivity can significantly enhance the performance. The proposed model may be helpful for developing high-efficiency hybrid electron devices.

Keyword:

optimum criterion Schottky junction thermionic emission thermophotovoltaic

Community:

  • [ 1 ] [Liao, Tianjun]Chongqing Univ Technol, Dept Phys & Energy, Chongqing 4000, Peoples R China
  • [ 2 ] [Du, Jianying]Xiamen Univ, Dept Phys, Xiamen 361005, Fujian, Peoples R China
  • [ 3 ] [Chen, Xiaohang]Xiamen Univ, Dept Phys, Xiamen 361005, Fujian, Peoples R China
  • [ 4 ] [Chen, Jincan]Xiamen Univ, Dept Phys, Xiamen 361005, Fujian, Peoples R China
  • [ 5 ] [Guo, Juncheng]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Fujian, Peoples R China

Reprint 's Address:

  • [Chen, Xiaohang]Xiamen Univ, Dept Phys, Xiamen 361005, Fujian, Peoples R China

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Source :

JOURNAL OF PHYSICS D-APPLIED PHYSICS

ISSN: 0022-3727

Year: 2020

Issue: 5

Volume: 53

3 . 2 0 7

JCR@2020

3 . 1 0 0

JCR@2023

ESI Discipline: PHYSICS;

ESI HC Threshold:115

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 7

SCOPUS Cited Count: 10

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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