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author:

Guan, Chengzhi (Guan, Chengzhi.) [1] | Wang, Yudong (Wang, Yudong.) [2] | Chen, Kongfa (Chen, Kongfa.) [3] (Scholars:陈孔发) | Xiao, Guoping (Xiao, Guoping.) [4] | Lin, Xiao (Lin, Xiao.) [5] | Zhou, Jing (Zhou, Jing.) [6] | Song, Sanzhao (Song, Sanzhao.) [7] | Wang, Jian-Qiang (Wang, Jian-Qiang.) [8] | Zhu, Zhiyuan (Zhu, Zhiyuan.) [9] | Zhou, Xiao-Dong (Zhou, Xiao-Dong.) [10]

Indexed by:

EI Scopus SCIE

Abstract:

A novel molten salt method was employed to synthesize 10% Nb doped La0.6Sr0.4FeO3-delta (LSFN). The assynthesized powders were pure and adopted a porous structure. Using LSFN as the oxygen electrode for a reversible solid oxide cell, the button cell exhibited a peak power density of 0.79Wcm(-2) in H-2 and an electrolysis current density of 0.89 A cm(-2) at 1.3 V in 50% CO2/50% H-2 at 800 degrees C. A large fraction of Fe2+ was found in LSFN, resulting in the improved performance. Our results indicate that the molten salt method is a promising approach for the synthesis of highly active perovskite electrode with a dopant of Nb. (C) 2019 Elsevier B.V. All rights reserved.

Keyword:

Defects Lanthanum-strontium-ferrite Molten salt synthesis Nb doping Porous materials Solid oxide cell

Community:

  • [ 1 ] [Guan, Chengzhi]Chinese Acad Sci, Dept Molten Salt Chem & Engn, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
  • [ 2 ] [Xiao, Guoping]Chinese Acad Sci, Dept Molten Salt Chem & Engn, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
  • [ 3 ] [Lin, Xiao]Chinese Acad Sci, Dept Molten Salt Chem & Engn, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
  • [ 4 ] [Zhou, Jing]Chinese Acad Sci, Dept Molten Salt Chem & Engn, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
  • [ 5 ] [Wang, Jian-Qiang]Chinese Acad Sci, Dept Molten Salt Chem & Engn, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
  • [ 6 ] [Zhu, Zhiyuan]Chinese Acad Sci, Dept Molten Salt Chem & Engn, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
  • [ 7 ] [Guan, Chengzhi]Chinese Acad Sci, Shanghai Inst Appl Phys, Key Lab Interfacial Phys & Technol, Shanghai 201800, Peoples R China
  • [ 8 ] [Xiao, Guoping]Chinese Acad Sci, Shanghai Inst Appl Phys, Key Lab Interfacial Phys & Technol, Shanghai 201800, Peoples R China
  • [ 9 ] [Lin, Xiao]Chinese Acad Sci, Shanghai Inst Appl Phys, Key Lab Interfacial Phys & Technol, Shanghai 201800, Peoples R China
  • [ 10 ] [Zhou, Jing]Chinese Acad Sci, Shanghai Inst Appl Phys, Key Lab Interfacial Phys & Technol, Shanghai 201800, Peoples R China
  • [ 11 ] [Wang, Jian-Qiang]Chinese Acad Sci, Shanghai Inst Appl Phys, Key Lab Interfacial Phys & Technol, Shanghai 201800, Peoples R China
  • [ 12 ] [Zhu, Zhiyuan]Chinese Acad Sci, Shanghai Inst Appl Phys, Key Lab Interfacial Phys & Technol, Shanghai 201800, Peoples R China
  • [ 13 ] [Guan, Chengzhi]Univ Chinese Acad Sci, Beijing 100049, Peoples R China
  • [ 14 ] [Lin, Xiao]Univ Chinese Acad Sci, Beijing 100049, Peoples R China
  • [ 15 ] [Song, Sanzhao]Univ Chinese Acad Sci, Beijing 100049, Peoples R China
  • [ 16 ] [Wang, Yudong]Univ Louisiana Lafayette, Inst Mat Res & Innovat, Lafayette, LA 70503 USA
  • [ 17 ] [Zhou, Xiao-Dong]Univ Louisiana Lafayette, Inst Mat Res & Innovat, Lafayette, LA 70503 USA
  • [ 18 ] [Wang, Yudong]Univ Louisiana Lafayette, Dept Chem Engn, Lafayette, LA 70503 USA
  • [ 19 ] [Zhou, Xiao-Dong]Univ Louisiana Lafayette, Dept Chem Engn, Lafayette, LA 70503 USA
  • [ 20 ] [Chen, Kongfa]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Fujian, Peoples R China

Reprint 's Address:

  • 陈孔发

    [Wang, Jian-Qiang]Chinese Acad Sci, Dept Molten Salt Chem & Engn, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China;;[Wang, Jian-Qiang]Chinese Acad Sci, Shanghai Inst Appl Phys, Key Lab Interfacial Phys & Technol, Shanghai 201800, Peoples R China;;[Zhou, Xiao-Dong]Univ Louisiana Lafayette, Inst Mat Res & Innovat, Lafayette, LA 70503 USA;;[Zhou, Xiao-Dong]Univ Louisiana Lafayette, Dept Chem Engn, Lafayette, LA 70503 USA;;[Chen, Kongfa]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Fujian, Peoples R China

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Source :

MATERIALS LETTERS

ISSN: 0167-577X

Year: 2019

Volume: 245

Page: 114-117

3 . 2 0 4

JCR@2019

2 . 7 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:236

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 18

SCOPUS Cited Count: 20

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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