Up-to-date　optical　storage　technology　calls　for　large　memory　capacity,　expanded　storage　dimension,　rewritable　capability,　low　cost,　and　high　energy　efficiency,　which　poses　stringent　requirements　on　the　storage　medium.　In　this　study,　a　novel　BaSi2O5:Eu2+,Nd3+　photostimulated　luminescence　(PSL)　phosphor　is　developed　and　then　made　into　phosphor-in-glass　(PiG)　storage　medium.　Upon　ultraviolet　light　irradiation　(write-in),　the　generated　electrons　are　captured　by　the　traps,　which　can　be　further　released　by　thermal　or　near-infrared　laser　stimulation　(read-out).　An　insightful　investigation　is　carried　out　to　establish　the　relationship　between　trap　properties　and　PSL　performance.　Demonstration　application　confirmed　the　intensity-multiplexing　optical　information　(including　the　designed　bar　code,　quick　response　(QR)　code,　graphic　patterns,　and　binary　data)　encoding/decoding.　Remarkably,　BaSi2O5:Eu2+,Nd3+　PSL　PiG　show　excellent　erasable-rewritable　capability　thanking　to　the　admirable　anti-ultraviolet　property　in　glass　host,　as　well　as　good　optical　data　retention　ability　owing　to　the　spatially　isolated　deep　traps.　Hopefully,　the　present　work　can　push　forward　the　research　progress　of　PSL　material　and　its　practical　application　in　optical　storage.