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author:

Zou, Shenghan (Zou, Shenghan.) [1] | Liu, Yongsheng (Liu, Yongsheng.) [2] | Li, Jianhai (Li, Jianhai.) [3] | Liu, Caiping (Liu, Caiping.) [4] | Feng, Rui (Feng, Rui.) [5] (Scholars:冯蕊) | Jiang, Feilong (Jiang, Feilong.) [6] | Li, Yongxiang (Li, Yongxiang.) [7] | Song, Jizhong (Song, Jizhong.) [8] | Zeng, Haibo (Zeng, Haibo.) [9] | Hong, Maochun (Hong, Maochun.) [10] | Chen, Xueyuan (Chen, Xueyuan.) [11]

Indexed by:

EI Scopus SCIE

Abstract:

All-inorganic cesium lead halide perovskite (CsPbX3, X = Cl, Br, and I) quantum dots (QDs), possessing high photoluminescence quantum yields and tunable color output, have recently been endowed great promise for high-performance solar cells and light-emitting diodes (LEDs). Although moisture stability has been greatly improved through separating QDs with a SiO2 shell, the practical applications of CsPbX3 QDs are severely restricted by their poor thermal stability, which is associated with the intrinsically low formation energies of perovskite lattices. In this regard, enhancing the formation energies of perovskite lattices of CsPbX3 QDs holds great promise in getting to the root of their poor thermal stability, which hitherto remains untouched. Herein, we demonstrate an effective strategy through Mn2+ substitution to fundamentally stabilize perovskite lattices of CsPbX3 QDs even at high temperatures up to 200 degrees C under ambient air conditions. We employ first-principle calculations to confirm that the significantly improved thermal stability and optical performance of CsPbX3:Mn2+ QDs arise primarily from the enhanced formation energy due to the successful doping of Mn2+ in CsPbX3 QDs. Benefiting from such an effective substitution strategy, these Mn2+-doped CsPbX3 QDs can function well as efficient light emitters toward the fabrication of high-performance perovskite LEDs.

Keyword:

Community:

  • [ 1 ] [Zou, Shenghan]Chinese Acad Sci, Fujian Inst Res Struct Matter, CAS Key Lab Design & Assembly Funct Nanostruct, CAS Key Lab Optoelectr Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China
  • [ 2 ] [Liu, Yongsheng]Chinese Acad Sci, Fujian Inst Res Struct Matter, CAS Key Lab Design & Assembly Funct Nanostruct, CAS Key Lab Optoelectr Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China
  • [ 3 ] [Liu, Caiping]Chinese Acad Sci, Fujian Inst Res Struct Matter, CAS Key Lab Design & Assembly Funct Nanostruct, CAS Key Lab Optoelectr Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China
  • [ 4 ] [Jiang, Feilong]Chinese Acad Sci, Fujian Inst Res Struct Matter, CAS Key Lab Design & Assembly Funct Nanostruct, CAS Key Lab Optoelectr Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China
  • [ 5 ] [Hong, Maochun]Chinese Acad Sci, Fujian Inst Res Struct Matter, CAS Key Lab Design & Assembly Funct Nanostruct, CAS Key Lab Optoelectr Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China
  • [ 6 ] [Chen, Xueyuan]Chinese Acad Sci, Fujian Inst Res Struct Matter, CAS Key Lab Design & Assembly Funct Nanostruct, CAS Key Lab Optoelectr Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China
  • [ 7 ] [Zou, Shenghan]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China
  • [ 8 ] [Liu, Yongsheng]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China
  • [ 9 ] [Liu, Caiping]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China
  • [ 10 ] [Jiang, Feilong]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China
  • [ 11 ] [Hong, Maochun]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China
  • [ 12 ] [Chen, Xueyuan]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China
  • [ 13 ] [Li, Jianhai]Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, Inst Optoelect & Nanomat, MIIT Key Lab Adv Display Mat & Devices, Nanjing 210094, Jiangsu, Peoples R China
  • [ 14 ] [Song, Jizhong]Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, Inst Optoelect & Nanomat, MIIT Key Lab Adv Display Mat & Devices, Nanjing 210094, Jiangsu, Peoples R China
  • [ 15 ] [Zeng, Haibo]Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, Inst Optoelect & Nanomat, MIIT Key Lab Adv Display Mat & Devices, Nanjing 210094, Jiangsu, Peoples R China
  • [ 16 ] [Feng, Rui]Fuzhou Univ, Testing Ctr, Fuzhou 350002, Fujian, Peoples R China
  • [ 17 ] [Zou, Shenghan]Univ Chinese Acad Sci, Beijing 100049, Peoples R China
  • [ 18 ] [Zou, Shenghan]ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
  • [ 19 ] [Zou, Shenghan]Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
  • [ 20 ] [Li, Yongxiang]Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

Reprint 's Address:

  • [Liu, Yongsheng]Chinese Acad Sci, Fujian Inst Res Struct Matter, CAS Key Lab Design & Assembly Funct Nanostruct, CAS Key Lab Optoelectr Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China;;[Hong, Maochun]Chinese Acad Sci, Fujian Inst Res Struct Matter, CAS Key Lab Design & Assembly Funct Nanostruct, CAS Key Lab Optoelectr Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China;;[Chen, Xueyuan]Chinese Acad Sci, Fujian Inst Res Struct Matter, CAS Key Lab Design & Assembly Funct Nanostruct, CAS Key Lab Optoelectr Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China;;[Liu, Yongsheng]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China;;[Hong, Maochun]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China;;[Chen, Xueyuan]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China;;[Zeng, Haibo]Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, Inst Optoelect & Nanomat, MIIT Key Lab Adv Display Mat & Devices, Nanjing 210094, Jiangsu, Peoples R China

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Source :

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

ISSN: 0002-7863

Year: 2017

Issue: 33

Volume: 139

Page: 11443-11450

1 4 . 3 5 7

JCR@2017

1 4 . 5 0 0

JCR@2023

ESI Discipline: CHEMISTRY;

ESI HC Threshold:226

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 749

SCOPUS Cited Count: 780

ESI Highly Cited Papers on the List: 36 Unfold All

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