• Complex
  • Title
  • Keyword
  • Abstract
  • Scholars
  • Journal
  • ISSN
  • Conference
成果搜索

author:

Chen Shifang (Chen Shifang.) [1] | Chen Wenjie (Chen Wenjie.) [2] | Wang Bin (Wang Bin.) [3] (Scholars:王彬) | Zhang Xiaobin (Zhang Xiaobin.) [4] | Huang Xin (Huang Xin.) [5] | Zhang Yongfan (Zhang Yongfan.) [6] (Scholars:章永凡)

Indexed by:

Scopus SCIE PKU CSCD

Abstract:

Extensive density functional theoretical (DFT) and ab initio [CCSD(T)] calculations were combined to investigate the geometric and electronic structure of a series of dinuclear hafnium oxide clusters, Hf2On-/0 (n=1 similar to 6). DFT calculations were performed to search for the lowest energy structures for both the anionic clusters and the neutral counterparts. The search for the global minima was performed using analytical gradients with the Stuttgart relativistic small core potential and the valence basis sets augmented with two f-type and one g-type polarization functions for Hf and the aug-cc-pVTZ basis set for oxygen. The relative energies of the low-lying structures (within ca. 0.35 eV) were further evaluated via single-point calculations at the coupled cluster [CCSD(T)] level with the Hf/Stuttgart+2flg/O/aug-cc-pVTZ basis sets at the B3LYP geometries. Generalized Koopmans' theorem (GKT) was applied to predict VDEs and simulate the anion photoelectron spectra (PES). The trends of structural evolution and the behavior of sequential oxidation of the Hf2On (n= 1 similar to 6) clusters were observed. For the anionic species, starting from the C-2v triangular structure Hf2O- the next O atom in the Hf2O2- cluster was again bridge-bonded, forming a rhombus structure. The third O atom occupied the terminal site. The fourth O atom favored the bridging site and the fifth O atom occupied the terminal site. In Hf2O6-, the additional O atom was bonded to a terminal site. Molecular orbital analyses were performed to elucidate the chemical bonding and the structural evolution in Hf(2)On(-) (n= 1 similar to 4) clusters. Spin density analyses revealed oxygen radical, diradical and superoxide characters in the oxygen-rich clusters, except for the singlet Hf2O5 cluster. We showed that Hf2O3 contains a localized Hf2+ site, which can readily react with O-2 to form the Hf2O5 cluster. The Hf2O6 -and Hf2O6 clusters, which can be viewed to be formed by the interaction of Hf2O4-/0 and O-2, may be utilized as molecular models to understand dioxygen activation on Hf2O4- and Hf2O4 clusters.

Keyword:

CCSD(T) DFT hafnium oxide cluster radical simulated PES

Community:

  • [ 1 ] [Chen Shifang]Fuzhou Univ, Coll Chem, Fuzhou 350116, Peoples R China
  • [ 2 ] [Wang Bin]Fuzhou Univ, Coll Chem, Fuzhou 350116, Peoples R China
  • [ 3 ] [Zhang Xiaobin]Fuzhou Univ, Coll Chem, Fuzhou 350116, Peoples R China
  • [ 4 ] [Huang Xin]Fuzhou Univ, Coll Chem, Fuzhou 350116, Peoples R China
  • [ 5 ] [Zhang Yongfan]Fuzhou Univ, Coll Chem, Fuzhou 350116, Peoples R China
  • [ 6 ] [Chen Wenjie]Quanzhou Normal Univ, Coll Chem Engn & Mat, Quanzhou 362000, Peoples R China
  • [ 7 ] [Huang Xin]Fujian Prov Key Lab Theoret & Computat Chem, Xiamen 361005, Peoples R China
  • [ 8 ] [Zhang Yongfan]Fujian Prov Key Lab Theoret & Computat Chem, Xiamen 361005, Peoples R China

Reprint 's Address:

  • 章永凡

    [Zhang Yongfan]Fuzhou Univ, Coll Chem, Fuzhou 350116, Peoples R China;;[Zhang Yongfan]Fujian Prov Key Lab Theoret & Computat Chem, Xiamen 361005, Peoples R China

Show more details

Related Keywords:

Source :

ACTA CHIMICA SINICA

ISSN: 0567-7351

CN: 31-1320/O6

Year: 2016

Issue: 12

Volume: 74

Page: 1009-1017

2 . 1 3 1

JCR@2016

1 . 7 0 0

JCR@2023

ESI Discipline: CHEMISTRY;

ESI HC Threshold:235

JCR Journal Grade:2

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 1

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

Online/Total:376/10051089
Address:FZU Library(No.2 Xuyuan Road, Fuzhou, Fujian, PRC Post Code:350116) Contact Us:0591-22865326
Copyright:FZU Library Technical Support:Beijing Aegean Software Co., Ltd. 闽ICP备05005463号-1