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author:

Lei, Hongwei (Lei, Hongwei.) [1] | Qin, Pingli (Qin, Pingli.) [2] | Ke, Weijun (Ke, Weijun.) [3] | Guo, Yaxiong (Guo, Yaxiong.) [4] | Dai, Xin (Dai, Xin.) [5] | Chen, Zhao (Chen, Zhao.) [6] | Wang, Haoning (Wang, Haoning.) [7] | Li, Borui (Li, Borui.) [8] | Zheng, Qiao (Zheng, Qiao.) [9] (Scholars:郑巧) | Fang, Guojia (Fang, Guojia.) [10]

Indexed by:

EI Scopus SCIE

Abstract:

In this paper, a thin layer of high work function CuS was introduced to the interface between the anode and hole transporting layer (HTL) to modify the indium tin oxide (ITO) anode. Modified ITO substrates possess a higher work function, a lower sheet resistance and a negligible loss in transparency. More importantly, a thin layer of CuS can also benefit for the hole transporting of the device. Polymer solar cells (PSCs) utilizing modified ITO anodes exhibit a significant enhancement in power conversion efficiency (PCE) and air stability compared to devices with normal ITO anodes. This anode modification strategy applies to different active layer systems. Anode-modified devices with poly (3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) as the active layer exhibit a PCE of 3.5%, while poly(4,8-bis(5-(2-ethyl-hexyl)-thiophene-2-yl)-benzo[l, 2-b: 4,5-b'] dithiophene-alt-alkylcarbonylthieno[ 3,4-b] thiophene) (PBDTTT-C-T) and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM) system shows a PCE of 7.4%. As a result, this work provides a good compatibility for modification of ITO by a thin layer of CuS in PSCs to achieve better performance. (C) 2015 Elsevier B.V. All rights reserved.

Keyword:

Air stability CuS modification High work function Performance enhancement Polymer solar cell

Community:

  • [ 1 ] [Lei, Hongwei]Wuhan Univ, Sch Phys & Technol, Key Lab Artificial Micro & Nanostruct, Minist Educ China,Dept Elect Sci & Technol, Wuhan 430072, Peoples R China
  • [ 2 ] [Qin, Pingli]Wuhan Univ, Sch Phys & Technol, Key Lab Artificial Micro & Nanostruct, Minist Educ China,Dept Elect Sci & Technol, Wuhan 430072, Peoples R China
  • [ 3 ] [Ke, Weijun]Wuhan Univ, Sch Phys & Technol, Key Lab Artificial Micro & Nanostruct, Minist Educ China,Dept Elect Sci & Technol, Wuhan 430072, Peoples R China
  • [ 4 ] [Guo, Yaxiong]Wuhan Univ, Sch Phys & Technol, Key Lab Artificial Micro & Nanostruct, Minist Educ China,Dept Elect Sci & Technol, Wuhan 430072, Peoples R China
  • [ 5 ] [Dai, Xin]Wuhan Univ, Sch Phys & Technol, Key Lab Artificial Micro & Nanostruct, Minist Educ China,Dept Elect Sci & Technol, Wuhan 430072, Peoples R China
  • [ 6 ] [Chen, Zhao]Wuhan Univ, Sch Phys & Technol, Key Lab Artificial Micro & Nanostruct, Minist Educ China,Dept Elect Sci & Technol, Wuhan 430072, Peoples R China
  • [ 7 ] [Wang, Haoning]Wuhan Univ, Sch Phys & Technol, Key Lab Artificial Micro & Nanostruct, Minist Educ China,Dept Elect Sci & Technol, Wuhan 430072, Peoples R China
  • [ 8 ] [Li, Borui]Wuhan Univ, Sch Phys & Technol, Key Lab Artificial Micro & Nanostruct, Minist Educ China,Dept Elect Sci & Technol, Wuhan 430072, Peoples R China
  • [ 9 ] [Fang, Guojia]Wuhan Univ, Sch Phys & Technol, Key Lab Artificial Micro & Nanostruct, Minist Educ China,Dept Elect Sci & Technol, Wuhan 430072, Peoples R China
  • [ 10 ] [Lei, Hongwei]Wuhan Univ, Shenzhen Inst, Shenzhen 518055, Peoples R China
  • [ 11 ] [Fang, Guojia]Wuhan Univ, Shenzhen Inst, Shenzhen 518055, Peoples R China
  • [ 12 ] [Zheng, Qiao]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China

Reprint 's Address:

  • [Fang, Guojia]Wuhan Univ, Sch Phys & Technol, Key Lab Artificial Micro & Nanostruct, Minist Educ China,Dept Elect Sci & Technol, Wuhan 430072, Peoples R China

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Source :

ORGANIC ELECTRONICS

ISSN: 1566-1199

Year: 2015

Volume: 22

Page: 173-179

3 . 4 7 1

JCR@2015

2 . 7 0 0

JCR@2023

ESI Discipline: PHYSICS;

ESI HC Threshold:200

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 36

SCOPUS Cited Count: 36

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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