Thin　films　of　NiS　have　been　deposited　on　indium　doped　tin　oxide　coated　conducting　glass　substrates　using　electrodeposition　technique.　Structural　studies　revealed　that　the　deposited　films　exhibit　hexagonal　structure　with　preferential　orientation　along　(002)　plane.　Structural　parameters　such　as　crystallite　size,　strain　and　dislocation　density　are　calculated　for　films　with　different　thickness　values　obtained　at　various　deposition　time.　The　film　composition　and　surface　morphology　have　been　analyzed　using　scanning　electron　microscopy　and　energy　dispersive　analysis　by　X-rays.　Optical　absorption　analysis　showed　that　the　deposited　films　possess　band　gap　value　around　0.7　eV.