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The photo-responded behavior of ZnO and its sensing response to ethylene or acetone under visible-light irradiation at room temperature were reported. A ZnO sensor without any response to target gas in the air atmosphere in dark at room temperature, exhibits not only a photo response but also an obvious sensing response to target gas in the air atmosphere under visible-light irradiation. It is suggested that the non-intrinsic photo-absorption induced by the native defects of ZnO (i.e., the two-photon or multi-photon excitation process via the intraband) may be responsible for the photo-responded behavior to the visible light. Moreover, a mechanism model that accounts for the solid-state process of photo-carrier generation/recombination is proposed to explain the photo-induced gas sensing response of ZnO under visible-light irradiation. This indicates that the photo-activated gas sensing response property of semiconductor can be also caused by its non-intrinsic photo-absorption. (C) 2013 Elsevier B.V. All rights reserved.
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SENSORS AND ACTUATORS B-CHEMICAL
ISSN: 0925-4005
Year: 2013
Volume: 188
Page: 293-297
3 . 8 4
JCR@2013
8 . 0 0 0
JCR@2023
ESI Discipline: CHEMISTRY;
JCR Journal Grade:1
CAS Journal Grade:1
Cited Count:
WoS CC Cited Count: 61
SCOPUS Cited Count: 64
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 1
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