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author:

Xu, Yi-Jun (Xu, Yi-Jun.) [1] (Scholars:徐艺军) | Fu, Xianzhi (Fu, Xianzhi.) [2] (Scholars:付贤智)

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EI Scopus SCIE

Abstract:

The viability of functionalization of the semiconductor surfaces of diamond (100), Si (100), and Ge (100) by traditional [3 + 2] cycloaddition of transition metal oxides has been predicted using effective cluster models it) the framework of density functional theory. The cycloaddition of transition metal oxides (OsO4, RuO4, and MnO4-) onto the X (100) (X = C, Si, and Ge) surface is much more facile than that of other molecular analogues including ethylene, fullerene, and single-walled carbon nanotubes because of the high reactivity of surface dimers of X (100). Our computational results demonstrate the plausibility that the well-known [3 + 2] cycloaddition of transition metal oxides to alkenes in organic chemistry can be employed as a new type of surface reaction to functionalize the semiconductor X (100) surface, which offers the new possibility for self assembly or chemical functionalization of X (100) at low temperature. More importantly, the chemical functionalization of X (100) by cycloaddition of transition metal oxides provides the molecular basis for preparation of semiconductor-supported catalysts but also strongly advances the concept of using organic reactions to modify the solid surface, particularly to modify the semiconductor C (100), Si (100), and Ge (100) surfaces for target applications in numerous fields such as microelectronics and heterogeneous photocatalysis.

Keyword:

Community:

  • [ 1 ] [Xu, Yi-Jun]Fuzhou Univ, Coll Chem & Chem Engn, Res Inst Photocatalysis, State Key Lab Breeding Base Photocatalysis, Fuzhou 350002, Peoples R China
  • [ 2 ] [Fu, Xianzhi]Fuzhou Univ, Coll Chem & Chem Engn, Res Inst Photocatalysis, State Key Lab Breeding Base Photocatalysis, Fuzhou 350002, Peoples R China

Reprint 's Address:

  • 徐艺军

    [Xu, Yi-Jun]Fuzhou Univ, Coll Chem & Chem Engn, Res Inst Photocatalysis, State Key Lab Breeding Base Photocatalysis, Fuzhou 350002, Peoples R China

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Source :

LANGMUIR

ISSN: 0743-7463

Year: 2009

Issue: 17

Volume: 25

Page: 9840-9846

3 . 8 9 8

JCR@2009

3 . 7 0 0

JCR@2023

ESI Discipline: CHEMISTRY;

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 5

SCOPUS Cited Count: 5

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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