Silicon　carbide　(SiC)　precursor　was　obtained　by　sol-gel　used　tetraethoxysilane　as　silicon　source　and　saccharose　as　carbon　source,　and　then　the　precursor　was　used　to　prepare　SiC　by　carbothermal　reduction　under　dynamic　vacuum　condition.　The　samples　were　characterized　by　X-ray　diffraction,　scanning　electron　microscope,　and　low-temperature　nitrogen　adsorption-desorption　measurement.　The　results　showed　that　the　carbothermal　temperature　for　synthesizing　SiC　needed　to　be　at　1,100　degrees　C　under　dynamic　vacuum.　At　this　temperature,　the　obtained　sample　is　composed　of　agglomerated　regular　grains　with　size　ranging　from　20　to　40　nm　and　has　a　high　surface　area　of　167　m(2)/g　and　the　main　pore　size　center　at　5.3　nm.