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author:

Zhou, Jiangcong (Zhou, Jiangcong.) [1] | Liu, Xinling (Liu, Xinling.) [2] | Lai, Yiqing (Lai, Yiqing.) [3] | Chen, Yu (Chen, Yu.) [4] | Qiu, Congcong (Qiu, Congcong.) [5] | Lei, Lei (Lei, Lei.) [6]

Indexed by:

EI

Abstract:

Up to now, most of the emisison wavelengths of the reported scintillators are located in ultra-violet (UV) or visible range. Herein, to further expand the X-ray excited fluorescence emission spectrum, an active core/dual-shell nanocrystal (NC) architecture is used to actualize near-infrared scintillation. Specifically, under the X-ray excitation, near-infrared emission from Nd3+ ions at ~1064 and Yb3+ ions at 980 nm are achieved. The active outer shell with the incorporation of Ce3+ sensitizer ions benefited the enhancement of X-ray excited NIR fluorescence emission intensity owing to the enhanced energy transfer efficiency from Ce3+ to Nd3+ or Yb3+ emission centers. The present studied near-infrared NC scintillator have deeper penetration depth than that of UV and visible, which might be useful for X-ray imaging with improved sensitivity. © 2020 Elsevier B.V.

Keyword:

Emission spectroscopy Energy transfer Fluorine compounds Infrared devices Ions Nanocrystals Scintillation Scintillation counters

Community:

  • [ 1 ] [Zhou, Jiangcong]College of Chemistry & Materials Science, Longyan University, Fujian; 364000, China
  • [ 2 ] [Zhou, Jiangcong]College of Materials Science and Engineering, Fuzhou University, Fujian; 350108, China
  • [ 3 ] [Liu, Xinling]College of Chemistry & Materials Science, Longyan University, Fujian; 364000, China
  • [ 4 ] [Lai, Yiqing]College of Chemistry & Materials Science, Longyan University, Fujian; 364000, China
  • [ 5 ] [Lai, Yiqing]College of Materials Science and Engineering, Fuzhou University, Fujian; 350108, China
  • [ 6 ] [Chen, Yu]College of Chemistry & Materials Science, Longyan University, Fujian; 364000, China
  • [ 7 ] [Qiu, Congcong]College of Chemistry & Materials Science, Longyan University, Fujian; 364000, China
  • [ 8 ] [Lei, Lei]Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou; 310018, China

Reprint 's Address:

  • [lei, lei]institute of optoelectronic materials and devices, china jiliang university, hangzhou; 310018, china

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Source :

Optical Materials

ISSN: 0925-3467

Year: 2020

Volume: 107

3 . 8 0 0

JCR@2023

ESI HC Threshold:196

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 3

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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