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author:

Lv, Peiwen (Lv, Peiwen.) [1] | Xu, Chaosheng (Xu, Chaosheng.) [2] | Huang, Jiajia (Huang, Jiajia.) [3] | Du, Chengjiang (Du, Chengjiang.) [4] | Huang, Feng (Huang, Feng.) [5]

Indexed by:

EI

Abstract:

Photocatalytic H2 evolution through water splitting as a promising way of direct converting solar energy into chemical energy has attracted numerous attention. As an II−IV semiconductor, ZnS was advanced at high photocatalytic activity without any co-catalyst. In this study, a stirring-assisted hydrothermal method was designed to introduce Cu dopant into ZnS while carefully controlling the morphology. The H2 evolution rate were increased with the content of Cu in the Zn1-xCuxS. H2 production rate of 1296 μmol/h/g were achieved and reached the summit for Zn0.99Cu0.01S. Calculation result suggested an impurity energy level was induced by Cu dopant. A reversible photochromism has found in the Zn1-xCuxS. The transformation of Cu+ and Cu2+ was suggested to be the photochromic mechanism. As a result, the photocatalytic efficiency and stability of photocatalyst were improved during photocatalytic process. The photocatalytic and the anti-photocorrosion mechanism were discussed and it would promote a new strategy to design photochromic photocatalysts. © 2020 Elsevier B.V.

Keyword:

Catalyst activity Copper Hydrogen production II-VI semiconductors Photocatalytic activity Photochromism Semiconducting zinc compounds Solar energy Sulfur compounds Wide band gap semiconductors Zinc sulfide

Community:

  • [ 1 ] [Lv, Peiwen]CAS Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
  • [ 2 ] [Xu, Chaosheng]CAS Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
  • [ 3 ] [Xu, Chaosheng]Fuzhou University, Fuzhou; 350116, China
  • [ 4 ] [Huang, Jiajia]Fuzhou University, Fuzhou; 350116, China
  • [ 5 ] [Du, Chengjiang]CAS Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou; 350002, China
  • [ 6 ] [Huang, Feng]School of Materials, Sun Yat-sen University, Guangzhou; 510275, China

Reprint 's Address:

  • [lv, peiwen]cas key laboratory of optoelectronic materials chemistry and physics, fujian institute of research on the structure of matter, chinese academy of sciences, fuzhou; 350002, china

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Source :

Journal of Alloys and Compounds

ISSN: 0925-8388

Year: 2020

Volume: 844

5 . 3 1 6

JCR@2020

5 . 8 0 0

JCR@2023

ESI HC Threshold:196

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 3

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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