Efficient flexible Mo foil-based Cu2ZnSn(S, Se)4 solar cells from In-doping technique - Details

author：

Indexed by：

Abstract：

Cation　substitution　has　an　important　impact　on　the　power　conversion　efficiency　(PCE)　of　Cu2ZnSn(S,Se)4　(CZTSSe)　solar　cells.　Herein,　a　significant　PCE　enhancement　of　flexible　indium-doped　CZTSSe　solar　cells　has　been　achieved　by　partially　substituting　Sn4+　with　In3+.　Systematic　measurements　indicate　that　In　doping　in　CZTSSe　film　effectively　improves　the　crystallinity　and　carrier　concentration　of　the　absorber　layer.　Meanwhile,　the　treatment　reduces　interface　recombination　and　band　tailing　by　passivating　deep　defects　and　increases　the　open-circuit　voltage　(Voc)　of　the　solar　cells.　By　physical　analysis,　the　key　parameters　for　the　solar　cell　diode　such　as　A,　J0,　Rs　and　Rsh　are　significantly　improved　after　In-doping,　indicating　better　PN　junction　quality.　Under　the　optimal　In-doping　(x　=　In/(Sn　+　In)　=　9%),　the　flexible　Cu2ZnSn1-xInx(S,Se)4　solar　cell　has　been　successfully　obtained　with　the　best　efficiency　of　7.19%　and　the　Voc　enhancement　of　62　mV　due　to　reduced　Voc　deficit　and　band　tailing.　©　2020　Elsevier　B.V.

Keyword：

Carrier concentration Crystallinity Efficiency Indium compounds Molybdenum Open circuit voltage Semiconductor doping Solar cells

Community：

[ 1 ] [Yu, Xue]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
[ 2 ] [Cheng, Shuying]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
[ 3 ] [Cheng, Shuying]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou; 213164, China
[ 4 ] [Yan, Qiong]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
[ 5 ] [Yan, Qiong]Key Laboratory of Green Perovskites Application of Fujian Province Universities, Fujian Jiangxia University, Fuzhou; 350108, China
[ 6 ] [Fu, Junjie]Key Laboratory for Special Functional Materials of MOE, Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng; 475004, China
[ 7 ] [Jia, Hongjie]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
[ 8 ] [Sun, Quanzhen]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
[ 9 ] [Yang, Zhiyuan]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
[ 10 ] [Wu, Sixin]Key Laboratory for Special Functional Materials of MOE, Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng; 475004, China

Reprint 's Address：

[cheng, shuying]jiangsu collaborative innovation center of photovolatic science and engineering, changzhou; 213164, china;;[cheng, shuying]college of physics and information engineering, institute of micro-nano devices and solar cells, fuzhou university, fuzhou; 350108, china

Email：

sycheng@fzu.edu.cn

Show more details

Related Keywords：

Thermally evaporated SnS:Cu thin films for solar cells
2011，6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011
Numerical simulation of Cu2ZnSnS4 based solar cells with In2S3 buffer layers by SCAPS-1D
2014，Journal of Applied Science and Engineering
Preparation of SnS: Ag thin films by pulse electrodeposition
2008，Chinese Journal of Semiconductors
InSe:Ge-doped InSe van der Waals heterostructure to enhance photogenerated carrier separation for self-powered photoelectrochemical-type photodetectors
2022，Nanoscale
Fabrication and Reflow of Indium Bumps for Active-Matrix Micro-LED Display of 3175 PPI
2025，Displays

Source ：

Solar Energy Materials and Solar Cells

ISSN： 0927-0248

Year： 2020

Volume： 209

7 . 2 6 7

JCR@2020

6 . 3 0 0

JCR@2023

ESI HC Threshold：196

JCR Journal Grade：1

CAS Journal Grade：2

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 28

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 1

Affiliated Colleges：

Get Fulltext

DOI Library Discovery Baidu Scholar Search Engineering Village

Type
Departments

All Years Choose Year From to