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author:

Xue, Lu (Xue, Lu.) [1] | Liu, Yang (Liu, Yang.) [2] | Li, Fushan (Li, Fushan.) [3] | Sun, Kai (Sun, Kai.) [4] | Chen, Wei (Chen, Wei.) [5] | Yang, Kaiyu (Yang, Kaiyu.) [6] | Hu, Hailong (Hu, Hailong.) [7] | Lin, Jintang (Lin, Jintang.) [8] | Chen, Huipeng (Chen, Huipeng.) [9] | Yang, Zunxian (Yang, Zunxian.) [10] | Guo, Tailiang (Guo, Tailiang.) [11]

Indexed by:

EI

Abstract:

In this work, we report highly flexible QLEDs based on a quantum dots-polymer composite emitting layer. Conventional quantum dot films exhibit cracks after rough bending. Herein, polymethyl methacrylate (PMMA) was doped into quantum dot solution, acting as binder for neighboring quantum dots. In addition, PMMA can be serving as an electron blocking layer due to its insulating property, and then balancing the charge recombination and improving device performance. The flexible QLEDs have excellent mechanical properties with an ultimate bend radius of 1.5 mm, and they show no significant performance degradation after 500 times bending with radius of 4 mm. The flexible QLEDs exhibit high performance with maximum luminance of 14880 cd/m2 and maximum current efficiency of 21.3 cd/A. © 2019 Elsevier Ltd

Keyword:

Balancing Charge transfer Composite materials Graphene quantum dots Nanocrystals Organic light emitting diodes (OLED) Polymethyl methacrylates Quantum chemistry Semiconductor quantum dots

Community:

  • [ 1 ] [Xue, Lu]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 2 ] [Liu, Yang]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 3 ] [Li, Fushan]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 4 ] [Sun, Kai]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 5 ] [Chen, Wei]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 6 ] [Yang, Kaiyu]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 7 ] [Hu, Hailong]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 8 ] [Lin, Jintang]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 9 ] [Chen, Huipeng]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 10 ] [Yang, Zunxian]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 11 ] [Guo, Tailiang]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China

Reprint 's Address:

  • [li, fushan]institute of optoelectronic technology, fuzhou university, fuzhou; 350116, china

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Source :

Vacuum

ISSN: 0042-207X

Year: 2019

Volume: 163

Page: 282-286

2 . 9 0 6

JCR@2019

3 . 8 0 0

JCR@2023

ESI HC Threshold:236

JCR Journal Grade:2

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 15

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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