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author:

Tian, Jun (Tian, Jun.) [1] | Hong, ChunFu (Hong, ChunFu.) [2] | Yan, XiaoHui (Yan, XiaoHui.) [3] | Hong, LiHua (Hong, LiHua.) [4] | Dai, PinQiang (Dai, PinQiang.) [5]

Indexed by:

EI

Abstract:

In the present work, 0.2 wt% Ni and 0.1–0.5 wt% RE (Ce and La mixed rare-earth) were added into Zn–20Sn high-temperature lead-free solders. The effects of Ni and RE additions on the microstructure and properties of the solder alloys were investigated. The results show that with the increase of RE content, the solidus temperature of the solder alloys does not change much, but the liquidus temperature decreases, and the wettability and microhardness of the solder alloys increase. Adding Ni or RE element individually does not change the IMC layer structure at the solder/copper interface, but it affects the growth of the IMC layer. That is, the addition of Ni inhibits the growth of the interface IMC layer, and the addition of RE promotes the growth of the IMC layer. © 2018, Springer Science+Business Media, LLC, part of Springer Nature.

Keyword:

Lead-free solders Microstructure Rare earths

Community:

  • [ 1 ] [Tian, Jun]School of Materials Science and Engineering, Fuzhou University, Fuzhou, China
  • [ 2 ] [Tian, Jun]School of Materials Science and Engineering, Fujian University of Technology, Fuzhou, China
  • [ 3 ] [Tian, Jun]Fujian Provincial Key Laboratory of Advanced Materials Processing and Application, Fuzhou, China
  • [ 4 ] [Hong, ChunFu]School of Materials Science and Engineering, Fujian University of Technology, Fuzhou, China
  • [ 5 ] [Hong, ChunFu]Fujian Provincial Key Laboratory of Advanced Materials Processing and Application, Fuzhou, China
  • [ 6 ] [Yan, XiaoHui]School of Materials Science and Engineering, Fujian University of Technology, Fuzhou, China
  • [ 7 ] [Yan, XiaoHui]Fujian Provincial Key Laboratory of Advanced Materials Processing and Application, Fuzhou, China
  • [ 8 ] [Hong, LiHua]School of Materials Science and Engineering, Fujian University of Technology, Fuzhou, China
  • [ 9 ] [Hong, LiHua]Fujian Provincial Key Laboratory of Advanced Materials Processing and Application, Fuzhou, China
  • [ 10 ] [Dai, PinQiang]School of Materials Science and Engineering, Fuzhou University, Fuzhou, China
  • [ 11 ] [Dai, PinQiang]School of Materials Science and Engineering, Fujian University of Technology, Fuzhou, China
  • [ 12 ] [Dai, PinQiang]Fujian Provincial Key Laboratory of Advanced Materials Processing and Application, Fuzhou, China

Reprint 's Address:

  • [dai, pinqiang]fujian provincial key laboratory of advanced materials processing and application, fuzhou, china;;[dai, pinqiang]school of materials science and engineering, fujian university of technology, fuzhou, china;;[dai, pinqiang]school of materials science and engineering, fuzhou university, fuzhou, china

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Related Keywords:

Source :

Journal of Materials Science: Materials in Electronics

ISSN: 0957-4522

Year: 2019

Issue: 1

Volume: 30

Page: 824-831

2 . 2 2

JCR@2019

2 . 8 0 0

JCR@2023

ESI HC Threshold:236

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 2

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 5

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