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author:

Lai, Huan Sheng (Lai, Huan Sheng.) [1] | Fan, Deng Shuai (Fan, Deng Shuai.) [2] | Bai, Chunmei (Bai, Chunmei.) [3] | Liu, Kang Lin (Liu, Kang Lin.) [4]

Indexed by:

EI

Abstract:

It is crucial to exactly predict the value of C* in order to predict creep crack growth and assess the creep life of high temperature structures. The coefficient of h1, in the modified General Electric/Electric Power Research Institute (GE/EPRI) method for power-law creep materials with a threshold stress, was determined in this paper using the finite element method for various crack ratios and creep exponents of n. The effects that both the threshold stress and the load level have on the values of h1 were also investigated. The results of the study indicated that the values of h1 were obviously affected by the threshold stress at a low level of C*, but that they remained almost constant with the increased threshold stress at high levels of C*. The discrepancy of the value of h1 between the two levels of C* increased as the threshold stress increased. © 2019, © 2019 Informa UK Limited, trading as Taylor & Francis Group.

Keyword:

Crack propagation Creep

Community:

  • [ 1 ] [Lai, Huan Sheng]Sino-French Institute of Nuclear Engineering and Technology, Sun Yat-sen University, Zhuhai; 519082, China
  • [ 2 ] [Lai, Huan Sheng]School of Chemical Engineering, Fuzhou University, Fuzhou; 350116, China
  • [ 3 ] [Fan, Deng Shuai]School of Chemical Engineering, Fuzhou University, Fuzhou; 350116, China
  • [ 4 ] [Bai, Chunmei]School of Civil Engineering, Sun Yat-sen University, Zhuhai; 519082, China
  • [ 5 ] [Liu, Kang Lin]School of Chemical Engineering, Fuzhou University, Fuzhou; 350116, China

Reprint 's Address:

  • [lai, huan sheng]school of chemical engineering, fuzhou university, fuzhou; 350116, china;;[lai, huan sheng]sino-french institute of nuclear engineering and technology, sun yat-sen university, zhuhai; 519082, china

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Source :

Materials at High Temperatures

ISSN: 0960-3409

Year: 2019

Issue: 4

Volume: 36

Page: 335-343

1 . 3 8 9

JCR@2019

1 . 0 0 0

JCR@2023

ESI HC Threshold:236

JCR Journal Grade:4

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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