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author:

Perumal Veeramalai, Chandrasekar (Perumal Veeramalai, Chandrasekar.) [1] | Li, Fushan (Li, Fushan.) [2] | Guo, Tailiang (Guo, Tailiang.) [3] | Kim, Tae Whan (Kim, Tae Whan.) [4]

Indexed by:

EI

Abstract:

This paper reports a facile, cost effective method that uses an aqueous hydrothermal process for synthesizing two-dimensional molybdenum disulphide (MoS2) monolayer quantum dots (QDs) and their potential applications in flexible memristive devices. High-resolution transmission electron microscopy and atomic force microscopy images confirmed that the diameters of the synthesized MoS2 QDs with irregular shapes were in the range between 3 and 6 nm; their thicknesses were confirmed to lie between 1.0 and 0.8 nm, a clear indication that a monolayer of MoS2 QDs had been synthesized. Photoluminescence (PL) and time-resolved PL spectra of the MoS2 QDs revealed a strong emission in the blue region with a slower decay constant. Memristive devices fabricated by incorporating MoS2 QDs between poly(methylsilsesquioxane) ultrathin layers, which had been deposited on poly(ethylene terephthalate), demonstrated a high ON-OFF current ratio of ∼104, stable retention, and excellent endurance in the relaxed state; these devices were also demonstrated to function properly during bending and in a bent state. The flexible memristive devices demonstrated an OFF state with a very low current of 10−6 A. These results clearly show that ultrathin two-dimensional QDs have promising applications in high-performance flexible memristive devices. © The Royal Society of Chemistry.

Keyword:

Atomic force microscopy Cost effectiveness Ethylene High resolution transmission electron microscopy Layered semiconductors Memristors Molybdenum compounds Monolayers Nanocrystals Semiconductor quantum dots Sulfur compounds

Community:

  • [ 1 ] [Perumal Veeramalai, Chandrasekar]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 2 ] [Perumal Veeramalai, Chandrasekar]Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing; 100081, China
  • [ 3 ] [Li, Fushan]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 4 ] [Guo, Tailiang]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 5 ] [Kim, Tae Whan]Department of Electronic Engineering, Hanyang University, Seoul; 133-791, Korea, Republic of

Reprint 's Address:

  • [li, fushan]institute of optoelectronic technology, fuzhou university, fuzhou; 350002, china

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Source :

Dalton Transactions

ISSN: 1477-9226

Year: 2019

Issue: 7

Volume: 48

Page: 2422-2429

4 . 1 7 4

JCR@2019

3 . 5 0 0

JCR@2023

ESI HC Threshold:184

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 20

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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