The　source　electrode　and　drain　electrode　are　prepared　with　inkjet　printed　active　layer　on　the　spin-coated　transparent　source　electrode,　obtaining　a　vertical　phototransistor　with　high　photoresponsivity　of　~1　500　A/W　and　high　detectivity　of　~1.6×1014　Jones.　By　doping　electron　capture　materials　PCBM　into　the　active　layer,　the　recombination　of　photo-generated　holes　in　the　active　layer　decreases　and　the　photo-generated　current　increases.　Thus　the　photodetector　performance　is　improved　further.　It　is　found　that　when　the　electron　capture　material　doping　is　5wt%,　the　performance　of　phototransistor　is　better.　The　photoresponsivity　is　boosted　to　about　6　000　A/W　and　the　detectivity　is　up　to　1.4　×　1015　Jones.　©　2019,　Science　Press.　All　right　reserved.