In　this　paper,　the　effect　of　annealing　on　the　bipolar　resistive　switching　characteristics　of　a　Ti/Si3N4/n-GaN　metal-insulator-semiconductor　(MIS)　structure　memristor　is　demonstrated.　The　results　show　that　the　stability　and　repeatability　of　the　bipolar　resistive　switching　are　greatly　improved　in　annealed　Ti/Si3N4/n-GaN　MIS　devices.　The　mechanism　involved　is　revealed　by　both　conductive　force　microscopy　(CFM)　and　x-ray　photoelectron　spectroscopy　(XPS).　It　is　confirmed　to　in-situ　local　Ti　doping　in　Si3N4　by　thermal　annealing　and　can　be　ascribed　to　the　local　Ti　dopants　in　the　Si3N4　bonding　the　N　atoms　at　positive　bias　by　electro-reductive　process　that　benefits　to　form　stable　nanoscale　Si　filaments.　On　the　contrary,　the　Si　filaments　rupture　by　recombining　with　N　atoms　near　the　n-GaN　side　at　negative　bias.　The　proposed　device　is　apt　to　integrate　with　a　GaN-based　high　electron　mobility　transistor　(HEMT)　to　structure　a　one-transistor-one-resistor　(1T1R)　nonvolatile　memory　cell,　which　is　expected　to　develop　the　application　of　the　nitride　semiconductors　in　data　storage　in　addition　to　the　applications　in　light-emitting　diodes,　laser　diodes,　power　devices,　and　photodetectors.　©　2018　Elsevier　B.V.