In　this　work,　we　present　a　nonlinear　silicon　nitride　waveguide.　These　waveguide　are　fabricated　by　readily　available　PECVD,　conventional　contact　UV-lithography　and　high-temperature　annealing　techniques,　thus　dramatically　reducing　the　processing　complexity　and　cost.　By　patterning　the　waveguide　structures　firstly　and　then　carrying　out　a　high-temperature　annealing　process,　not　only　sufficient　waveguide　thickness　can　be　achieved,　which　gives　more　freedom　to　waveguide　dispersion　control,　but　also　the　material　absorption　loss　in　the　waveguides　be　greatly　reduced.　The　linear　optical　loss　of　the　fabricated　waveguide　with　a　cross-section　of　2.0　×　0.58　µm2　was　measured　to　be　as　low　as　0.58　dB/cm.　The　same　loss　level　is　demonstrated　over　a　broad　wavelength　range　from　1500　nm　to　1630　nm.　Moreover,　the　nonlinear　refractive　index　of　the　waveguide　was　determined　to　be　~6.94　×　10−19　m2/W,　indicating　that　comparable　nonlinear　performance　with　their　LPCVD　counterparts　is　expected.　These　silicon　nitride　waveguides　based　on　a　PECVD　deposition　platform　can　be　useful　for　the　development　of　more　complicated　on-chip　nonlinear　optical　devices　or　circuits.　©　2018　Optical　Society　of　America　under　the　terms　of　the　OSA　Open　Access　Publishing　Agreement.