A　novel　nonvolatile　floating-gate　transistor　memory　device　using　CdSe@ZnS　quantum　dots　(QDs)　embedded　the　insulating　polymer　as　a　charge-storage　layer　along　with　the　rational　design　of　device　structure　is　presented.　The　core-shell　structure　CdSe@ZnS　QDs　can　efficiently　trap　both　holes　and　electrons　under　the　applied　writing/erasing　operations,　resulting　in　a　considerable　threshold　voltage　shifts　(Δ　VTH)　over　50　V　and　forming　high-conductance　(ON)　and　low-conductance　(OFF)　states　at　a　gate　voltage　of　0　V.　The　value　of　threshold　voltage　shift　is　controlled　by　writing　and　erasing　voltages,　regardless　with　source-drain　voltages.　Furthermore,　it　exhibits　a　long　retention　time　(the　Δ　VTH　can　maintain　76%　at　108　s)　and　outstanding　endurance　characteristics　(＞500　cycles),　demonstrating　extraordinary　stable　and　reliable　memory　property.　Moreover,　a　thin　layer　of　Al2O3　was　introduced　as　tunneling　dielectric　layer　which　is　essential　for　the　high-performance　floating-gate　transistor　memory　device.　The　nonvolatile　organic　transistor　memory　devices　using　QDs-based　floating　gate　show　great　potential　application　for　high-performance　organic　memory　devices.　©　1963-2012　IEEE.