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author:

Sun, Lei (Sun, Lei.) [1] | Lin, Zhixian (Lin, Zhixian.) [2] | Zhou, Xiongtu (Zhou, Xiongtu.) [3] | Zhang, Yongai (Zhang, Yongai.) [4] | Guo, Tailiang (Guo, Tailiang.) [5]

Indexed by:

EI

Abstract:

Efficient field emitters of ZnO nanorods (NRs) after decorating of Cu-doped ZnO quantum dots (CZ QDs), by a facile hydrothermal method were reported. A layer with very tiny ZnO QDs was achieved along the axial direction throughout the whole ZnO nanorods. It's found that CZ QDs-modified ZnO NRs showed the best FE performance, comparing with eithor traditional ZnO NR emitters or the sample modified by pure ZnO QDs. By combining ZnO QDs and NRs utilizing surface modification engineering, a rough surface and a relatively sharp top of ZnO NR can be achieved, resulting in a significant improvement of FE characteristics. The enhancement may also be attributed to Cu-doping in ZnO QDs, which introduced more defects and free electrons in the conduction band of ZnO and also reduced the band gap. To shed light on the effects of Cu dopant, the morphology, microstructure and optical properties of ZnO QDs were further investigated in detail. The application of CZ QDs in FE materials may be expected to fabricate various FE devices by appropriate doping. © 2016 Elsevier B.V. All rights reserved.

Keyword:

Copper compounds Energy gap Field emission II-VI semiconductors Morphology Nanocrystals Nanorods Optical properties Semiconductor quantum dots Zinc oxide

Community:

  • [ 1 ] [Sun, Lei]Zhicheng College, Fuzhou University, Fuzhou; 350002, China
  • [ 2 ] [Sun, Lei]National and Local United Engineer Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 3 ] [Lin, Zhixian]National and Local United Engineer Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 4 ] [Zhou, Xiongtu]National and Local United Engineer Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 5 ] [Zhang, Yongai]National and Local United Engineer Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 6 ] [Guo, Tailiang]National and Local United Engineer Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China

Reprint 's Address:

  • [zhang, yongai]national and local united engineer laboratory of flat panel display technology, fuzhou university, fuzhou; 350002, china

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Source :

Journal of Alloys and Compounds

ISSN: 0925-8388

Year: 2016

Volume: 671

Page: 473-478

3 . 1 3 3

JCR@2016

5 . 8 0 0

JCR@2023

ESI HC Threshold:324

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 28

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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