Resistive switching memory based on organic/inorganic hybrid perovskite materials - Details

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Abstract：

In　this　work,　a　resistance　switching　memory　based　on　organic/inorganic　hybrid　perovskites　(OIHPs)　was　fabricated.　The　CH3NH3PbI3　perovskite　was　grown　on　polymethyl　methacrylate　(PMMA)　as　the　resistance　switching　layer　by　using　a　two-step　spin-coating　procedure.　The　conduction　mechanisms　of　indium-tin-oxide　(ITO)/PMMA/CH3NH3PbI3/PMMA/Ag　device　were　investigated　in　terms　of　current-voltage　characteristics.　The　memory　device　is　reprogrammable　and　the　ON/OFF　ratio　reaches　as　high　as　103.　Endurance　cycle　of　the　as-fabricated　memory　device　was　also　carried　out.　The　results　indicate　the　promising　electronic　application　of　OIHPs　in　resistance　switching　memories.　©　2016　Elsevier　Ltd.　All　rights　reserved.

Keyword：

Current voltage characteristics Data storage equipment Hybrid materials Perovskite Polymethyl methacrylates Switching Tin oxides

Community：

[ 1 ] [Liu, Yang]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350002, China
[ 2 ] [Li, Fushan]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350002, China
[ 3 ] [Chen, Zhixin]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350002, China
[ 4 ] [Guo, Tailiang]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350002, China
[ 5 ] [Wu, Chaoxing]Department of Department of Electronics and Computer Engineering, Hanyang University, Seoul; 133-791, Korea, Republic of
[ 6 ] [Kim, Tae Whan]Department of Department of Electronics and Computer Engineering, Hanyang University, Seoul; 133-791, Korea, Republic of

Reprint 's Address：

[li, fushan]institute of optoelectronic technology, fuzhou university, fuzhou; 350002, china

Email：

fushanli@hotmail.com

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Source ：

Vacuum

ISSN： 0042-207X

Year： 2016

Volume： 130

Page： 109-112

1 . 5 3

JCR@2016

3 . 8 0 0

JCR@2023

ESI HC Threshold：324

JCR Journal Grade：3

CAS Journal Grade：4

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SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 2

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