Cu2ZnSnS4　(CZTS)　thin　films　have　been　successfully　deposited　by　a　sol-gel　method　and　sulfurization　process.　The　properties　of　the　films　were　investigated　by　varying　sulfurization　time　and　H2S　concentration.　X-ray　diffraction　and　Raman　spectra　analyses　revealed　the　formation　of　CZTS　films　with　a　tetragonal　type　kesterite　structure.　With　increasing　the　sulfurization　time　and　H2S　concentration,　the　intensity　of　the　kesterite　(1　1　2)　peak　became　sharper.　The　stoichiometric　ratios　of　the　CZTS　films　were　different　from　the　precursors,　which　was　due　to　Sn　loss　during　the　sulfurization　process.　The　electrical　resistivity　and　mobility　of　the　films　increased　while　the　carrier　concentration　decreased　with　increasing　the　sulfurization　time.　The　CZTS　thin　films　sulfurized　at　5%　H2S　concentration　for　90　min　had　the　best　opto-electrical　properties　with　Eg　of　1.41　eV,　resistivity　of　3.64　Ω　cm,　carrier　concentration　of　1.11　×　1018　cm-3　and　mobility　of　1.54　cm2/(V　s)　at　room　temperature　for　PV　application.