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author：

Lin, M. (Lin, M..) [1] | Peng, Y. (Peng, Y..) [2] | Zhou, X. (Zhou, X..) [3] | Lin, T. (Lin, T..) [4] | Zhang, Y. (Zhang, Y..) [5] | Hu, J. (Hu, J..) [6] | Guo, T. (Guo, T..) [7]

Indexed by：

EI

Abstract：

The　morphology,　microstructure　and　field　emission　(FE)　properties　of　tetrapod　shaped　Sn　doped　ZnO　(T-SZO)　nanostructures　grown　for　different　times　were　investigated.　It　is　found　that　the　morphology,　particularly　the　aspect　ratio　of　the　T-SZO,　can　be　controlled　by　adjusting　the　growth　time　and　that　the　aspect　ratio　affects　its　FE　properties.　The　aspect　ratio　increases　first　with　the　growth　time,　and　after　90　s,　a　new　series　of　T-SZO　with　smaller　size　and　lower　aspect　ratio　appear,　leading　to　the　deterioration　of　the　FE　properties.　The　sample　grown　for　90　s　exhibits　the　highest　aspect　ratio　of　16:5　and　the　lowest　turn　on　field　of　1.82　V　μm-1.　©　2015　W.　S.　Maney　&　Son　Ltd.

Keyword：

Aspect ratio Deterioration Field emission II-VI semiconductors Morphology Nanostructures Thermal evaporation Tin Zinc oxide

Community：

  • [ 1 ] [Lin, M.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, Fujian; 350002, China
  • [ 2 ] [Peng, Y.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, Fujian; 350002, China
  • [ 3 ] [Zhou, X.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, Fujian; 350002, China
  • [ 4 ] [Lin, T.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, Fujian; 350002, China
  • [ 5 ] [Zhang, Y.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, Fujian; 350002, China
  • [ 6 ] [Hu, J.]MicroNano System Research Center, College of Information Engineering, Taiyuan University of Technology, Taiyuan, Shanxi; 030024, China
  • [ 7 ] [Guo, T.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, Fujian; 350002, China

Reprint 's Address：

  • [zhou, x.]college of physics and information engineering, fuzhou university, fuzhou, fujian; 350002, china

Email：


xtzhou@fzu.edu.cn
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Source ：

Materials Technology

ISSN： 1066-7857

Year： 2015

Issue： 6

Volume： 30

Page： 338-343

1 . 4 4 2

JCR@2015

2 . 9 0 0

JCR@2023

ESI HC Threshold：335

JCR Journal Grade：3

CAS Journal Grade：4

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count： 4

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 3

Affiliated Colleges：

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