In　this　work,　a　transparent　and　flexible　nonvolatile　memory　was　fabricated　using　a　solution　process.　The　conduction　mechanisms　of　the　metal/insulator/metal　structure　consisting　of　cadmium　selenide　quantum　dots　embedded　in　poly(methylsilsesquioxane)　dielectric　layers　were　investigated　in　terms　of　current-voltage　characteristics.　The　memory　device　is　reprogrammable　and　stable　up　to　1　×　104　s　with　little　deterioration　and　a　distinct　ON/OFF　ratio　of　104.　Endurance　cycle　and　retention　tests　of　the　as-fabricated　memory　device　were　also　carried　out.　The　results　indicate　that　the　device　has　good　operating　stability.　©　2014　The　Japan　Society　of　Applied　Physics.