Single-layer　graphene　(SLG)　was　synthesized　by　using　chemical　vapor　deposition　(CVD)　technique.　A　novel　method　was　developed　to　disperse　the　as-synthesized　SLG　in　poly　(methyl　methacrylate)　(PMMA)　matrix.　Current-voltage　measurements　on　the　Al/SLG:PMMA/Al　devices　showed　rewritable　resistance　switch　properties　with　volatile　memory　effect　due　to　the　existence　of　the　graphene　sheets.　The　operating　mechanisms　for　the　resistance　switch　effect　of　SLG:PMMA　nanocomposite　layer　were　discussed　based　on　the　electron-trapping　effect　and　electric-screen　effect　of　graphene.　The　SLG:PMMA　nanocomposite　holds　promise　for　application　in　dynamic　random　access　memory.　©　2013　Elsevier　Ltd.