Ga-doped　Gd3Fe5O12　(GIG)　single-crystals　with　various　doping　concentration　were　successfully　grown　by　the　edge-defined　film　fed　growth　(EFG)　technique.　XRD　pattern　and　SEM　micrographs　confirm　that　the　as-grown　crystal　is　in　the　single　GIG　phase　with　good　crystal　quality.　The　success　of　growing　Ga:GIG　crystal　by　using　EFG　method　provide　a　new　way　to　grow　the　single　crystal　of　the　incongruent　melting　compound.　The　magnetic　parameters　such　as　the　Curie　temperature　Tc,　the　saturation　magnetization　M　s,　the　magnetic　coercivity　Hc,　the　magnetic　saturation　field　Hs,　the　Faraday　rotation　angle　of　as-grown　crystals　were　measured.　After　as-grown　crystal　was　annealed　at　800　°C　in　oxygen　atmosphere,　the　optical　transmittance　can　be　significantly　enhanced.　The　reason　for　the　change　of　the　saturation　magnetization　Ms　before　and　after　annealing　is　also　discussed.　©　2014　Elsevier　B.V.　All　rights　reserved.