Although　terbium　gallium　garnet　(TGG)　single　crystals　suitable　for　practical　applications　have　been　grown　by　the　Czochralski　technique　due　to　its　congruent　melting　nature,　the　interface　shape　readily　deteriorates　to　spiral　growth　when　grown　with　a　flat　interface　or　facet　formation　when　grown　with　a　convex　interface.　The　Edge-defined　Film-fed　Growth　(EFG)　method　was　used　to　grow　TGG　crystals　for　the　first　time.　The　influence　of　the　raw　material　sintering　temperature,　growth　atmosphere,　growth　rate　and　other　growth　conditions　on　the　crystal　quality　were　investigated.　The　Verdet　constant　of　as-grown　crystal　was　measured　as　39　rad/T.m　at　1064　nm　by　the　extinction　method,　which　was　close　to　the　literature　value.　The　source　of　color　centers　in　the　crystals　is　also　discussed.　©　2013　Elsevier　B.V.