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Abstract:
Eu3+-doped SiO2-ZnO-Ga2O3 composite was fabricated by sol-gel method. X-ray diffraction analysis and transmission electron microscopy observation revealed that γ-Ga 2O3 nanocrystals were formed and distributed homogeneously among the amorphous matrix. The influence of the Ga2O3 content on the Eu3+ luminescence properties was discussed. Importantly, the Eu3+ emission intensity of the composite with 20% Ga2O3 was about 5.5 times stronger than that of the sample without Ga2O3, which is attributed to the efficient energy transfer from the nanocrystals to the rare-earth ions. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Physica Status Solidi (A) Applications and Materials Science
ISSN: 1862-6300
Year: 2013
Issue: 11
Volume: 210
Page: 2369-2373
1 . 5 2 5
JCR@2013
1 . 9 0 0
JCR@2023
JCR Journal Grade:2
CAS Journal Grade:3
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count: 3
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 1
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