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author:

Li, Wei (Li, Wei.) [1] | Chen, Wenzhe (Chen, Wenzhe.) [2] | Guo, Qiaohang (Guo, Qiaohang.) [3] | Zheng, Chan (Zheng, Chan.) [4]

Indexed by:

EI

Abstract:

Eu3+-doped SiO2-ZnO-Ga2O3 composite was fabricated by sol-gel method. X-ray diffraction analysis and transmission electron microscopy observation revealed that γ-Ga 2O3 nanocrystals were formed and distributed homogeneously among the amorphous matrix. The influence of the Ga2O3 content on the Eu3+ luminescence properties was discussed. Importantly, the Eu3+ emission intensity of the composite with 20% Ga2O3 was about 5.5 times stronger than that of the sample without Ga2O3, which is attributed to the efficient energy transfer from the nanocrystals to the rare-earth ions. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keyword:

Energy transfer Europium compounds Gallium compounds Gamma rays High resolution transmission electron microscopy II-VI semiconductors Metal ions Microstructure Nanocrystals Photoluminescence Rare earths Silica Sol-gel process Sol-gels X ray powder diffraction Zinc oxide

Community:

  • [ 1 ] [Li, Wei]College of Materials Science and Engineering, Fuzhou University, Fuzhou, Fujian 350108, China
  • [ 2 ] [Li, Wei]College of Materials Science and Engineering, Fujian University of Technology, Fuzhou, Fujian 350108, China
  • [ 3 ] [Chen, Wenzhe]College of Materials Science and Engineering, Fuzhou University, Fuzhou, Fujian 350108, China
  • [ 4 ] [Chen, Wenzhe]College of Materials Science and Engineering, Fujian University of Technology, Fuzhou, Fujian 350108, China
  • [ 5 ] [Guo, Qiaohang]College of Materials Science and Engineering, Fuzhou University, Fuzhou, Fujian 350108, China
  • [ 6 ] [Guo, Qiaohang]College of Materials Science and Engineering, Fujian University of Technology, Fuzhou, Fujian 350108, China
  • [ 7 ] [Zheng, Chan]College of Materials Science and Engineering, Fujian University of Technology, Fuzhou, Fujian 350108, China

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Source :

Physica Status Solidi (A) Applications and Materials Science

ISSN: 1862-6300

Year: 2013

Issue: 11

Volume: 210

Page: 2369-2373

1 . 5 2 5

JCR@2013

1 . 9 0 0

JCR@2023

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 3

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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