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author:

Hsueh, H.T. (Hsueh, H.T..) [1] | Hsueh, T.J. (Hsueh, T.J..) [2] | Chang, S.J. (Chang, S.J..) [3] | Hung, F.Y. (Hung, F.Y..) [4] | Hsu, C.L. (Hsu, C.L..) [5] | Dai, B.T. (Dai, B.T..) [6] | Lam, K.T. (Lam, K.T..) [7] | Wen, K.H. (Wen, K.H..) [8]

Indexed by:

EI

Abstract:

In this paper, the authors report the direct growth of ZnO nanowires (NWs) on a flexible substrate by the hydrothermal process and the fabrication of ZnO NW-based humidity sensor. It was found that average length and diameter of the ZnO NWs were 0.6 μm and 50nm, respectively. It was also found that resistance of the ZnO NWs decreased by 45% as we increased the relative humidity from 52% to 90%. Furthermore, it was found that measured resistance was very stable with negligible fluctuation after 16 days continuous testing. © 2002-2012 IEEE.

Keyword:

Humidity sensors II-VI semiconductors Nanowires Substrates Zinc oxide

Community:

  • [ 1 ] [Hsueh, H.T.]Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, Tainan 701, Taiwan
  • [ 2 ] [Hsueh, H.T.]National Nano Device Laboratories, Tainan 741, Taiwan
  • [ 3 ] [Hsueh, T.J.]National Nano Device Laboratories, Tainan 741, Taiwan
  • [ 4 ] [Chang, S.J.]Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan
  • [ 5 ] [Hung, F.Y.]Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, Tainan 701, Taiwan
  • [ 6 ] [Hsu, C.L.]Department of Electrical Engineering, National University of Tainan, Tainan 700, Taiwan
  • [ 7 ] [Dai, B.T.]National Nano Device Laboratories, Tainan 741, Taiwan
  • [ 8 ] [Lam, K.T.]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
  • [ 9 ] [Wen, K.H.]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China

Reprint 's Address:

  • [hsueh, h.t.]institute of nanotechnology and microsystems engineering, national cheng kung university, tainan 701, taiwan;;[hsueh, h.t.]national nano device laboratories, tainan 741, taiwan

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Source :

IEEE Transactions on Nanotechnology

ISSN: 1536-125X

Year: 2012

Issue: 3

Volume: 11

Page: 520-525

1 . 8

JCR@2012

2 . 1 0 0

JCR@2023

JCR Journal Grade:2

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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