The　composite　ZnO:　Sn　layers　with　high　oxidation　resistance　were　grown　by　DC　reactive　magnetron　sputtering　to　protect　the　conventional　metallic　electrodes　widely　used　in　field　emission　device　fabrication.　The　impacts　of　film　growth　conditions　on　the　properties　of　the　ZnO:Sn/Ag/ZnO:Sn　electrode　were　studied.　The　microstructures　of　the　ZnO:Sn/Ag/ZnO:Sn　layers,　before　and　after　annealing,　were　characterized　with　X-ray　diffraction,　scanning　electron　microscopy　and　an　optical　microscope.　The　results　show　that　under　optimized　growth　conditions,　the　compact,　25　nm　thick　ZnO:Sn　layer　with　a　resistivity　of　2.0×10-8　Ω·m　has　a　rather　high　oxidation　resistance　at　530°C.　We　suggest　that　ZnO:　Sn/Ag/ZnO:Sn　composite　layers　be　good　electrode　materials　in　FED　fabrication.