SnS　films　have　been　prepared　on　the　indium　tin　oxide　coated　glass　substrates　by　the　constant-current　electro-deposition.　By　investigating　the　influence　of　the　deposition　parameters　on　the　composition　of　the　deposited　films,　we　obtained　the　optimum　deposition　parameters　with　pH　=　2.7,　Sn　2+　/　S2O32-　=　1　/　5,　J　=　3.0　mA/cm2　and　t　=　1.5　h.　Many　nearly　stoichiometric　SnS　films　were　prepared.　These　films　were　characterized　with　X-ray　diffraction　and　scanning　electron　microscopy　analysis,　and　they　were　polycrystalline　with　orthorhombic　structure.　Their　direct　band　gaps　were　estimated　to　be　1.21∼1.42　eV　from　optical　measurements.　The　films　have　p-type　conductivity　with　a　resistivity　of　7.5∼20　Ω&bullcm.　©　2005　Elsevier　B.V.　All　rights　reserved.