Using　the　first-principles　method,　the　electronic　structures　of　clean　and　hydrogen-adsorbed　ZrC　(ill)　surfaces　have　been　studied.　The　results　of　the　geometrical　optimization　indicate　that,　for　the　clean　surface,　the　spacings　between　the　adjacent　layers　are　contracted　and　expanded　alternately　from　the　surface　to　the　bulk　within　certain　layers.　The　main　components　of　the　surface　state　in　DOS　located　near　EF　are　4dxx/dyz　orbitals　of　the　surface　Zr　atoms,　and　compared　to　the　ideal　surface,　the　relaxation　of　the　surface　has　little　influence　on　this　state.　For　the　hydrogen-adsorbed　surface,　the　calculated　results　show　that　the　hydrogen　atoms　are　preferably　adsorbed　on　the　surface　hollow　sites　in　which　the　third　layer　Zr　atoms　sit　directly　below　them,　and　in　this　case,　the　H　1s-induced　state　is　separated　from　the　bulk　states.　In　addition,　the　variation　of　H　1s-induced　state　is　explained　by　comparing　with　the　H/NbC(111)　system,　and　the　discussions　about　the　surface　core-level　shifts　and　the　surface　work　functions　are　also　presented　in　the　paper.