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Abstract：
The transient measurement for the photo-induced excess electron on the interface of GaAs-AlxGa1-xAs heterostructure with temperatures ranging from 71.5K to 163K and a time of 10-5-103 seconds. The theoretical calculation including the transient curves based on thermal phonon assisted tunneling, the capture barrier distribution of DX center in Si-doped AlxGa1-xAs layer and the relaxation of the tunneling electron agrees quantitatively with the experimental results.
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Chinese Journal of Semiconductors
ISSN： 0253-4177
Year： 1995
Issue： 4
Volume： 16
Page： 253-257
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SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 1
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