Ce-doped　NdVO4　nanorods　(NRs)　were　synthesized　via　a　one-step　hydrothermal　method　by　using　edetate　disodium　(EDTA)　as　a　chelating　agent.　CexNd1-xVO4　NRs　with　square　section　are　assigned　to　the　zircon-type　tetragonal　structure,　and　the　growth　direction　for　NRs　is　along　the　(200)　plane.　Cerium　in　CexNd1-xVO4　NRs　is　identified　as　substitutional　dopant.　Gas　sensors　based　on　CexNd1-xVO4　NRs　exhibit　that　the　types　of　semiconductors　transfer　from　n,　to　p　and　n-type　(n-p-n)　with　the　amount　of　Ce.　The　surface　for　Ce0.2Nd0.8VO4　NRs　is　with　positive　charge　by　Zeta　potentials　measurement,　confirming　that　it　corresponds　to　p-type　semiconductor.　XPS　data　demonstrates　that　the　quantity　for　Nd0　and　V4+　as　active　sites　on　the　surface　for　Ce0.2Nd0.8VO4　NRs　increases　by　Ce　doping,　leading　to　increase　in　the　quantity　of　adsorbed　oxygen　(O2−ads).　According　to　the　big　dipole　moment　of　acetone,　Ce0.2Nd0.8VO4　NRs　as　p-type　semiconductor　with　high　O2−ads　content　interacts　readily　with　acetone　at　Nd0　and　V4+　sites　during　redox　reaction.　A　gas　sensor　based　on　Ce0.2Nd0.8VO4　NRs　towards　acetone　gas　shows　distinct　selectivity　and　a　wide　detecting　linear　range　to　acetone　from　10　to　1000　ppm　(R2　=　0.98)　at　low　operating　temperature　(108　°C).　©　2017　Elsevier　B.V.