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author:

Gul, S.R. (Gul, S.R..) [1] | Khan, M. (Khan, M..) [2] | Yi, Z. (Yi, Z..) [3] | Wu, B. (Wu, B..) [4]

Indexed by:

Scopus

Abstract:

The location and nature of the doped elements strongly affect the structural, electronic and optical properties of TiO2. To tailor the band structure and modify the photoelectrochemical properties of TiO2, a pair of dopants is selected. Fe and N atoms are inserted in the TiO2 network at substitutional and interstitial sites with different relative distances. The main objective behind the different locations and sites of the doped elements is to banish the isolated unoccupied states from the forbidden region that normally annihilates the photogenerated carriers. Fe at the Ti site and N at the O site doped in the TiO2 network separated at a distance of 7.805 Å provided a suitable configuration of dopant atoms in terms of geometry and band structure. Moreover, the optical properties showed a notable shift to the visible regime. Individual dopants either introduced isolated unoccupied states in the band gap or disturbed the fermi level and structural properties. Furthermore, the other co-doped configurations showed no remarkable band shift, as well as exhibiting a suitable band structure. Resultantly, comparing the band structure and optical properties, it is argued that Fe (at Ti) and N (at O) doped at a distance of 7.805 Å would strongly improve the photoelectrochemical properties of TiO2. © 2018 by the authors.

Keyword:

Density functional theory; Fe; N-TiO2; Optical properties

Community:

  • [ 1 ] [Gul, S.R.]State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
  • [ 2 ] [Gul, S.R.]Multiscale Computational Materials Facility, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350100, China
  • [ 3 ] [Khan, M.]State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
  • [ 4 ] [Khan, M.]Department of Physics, Kohat University of Science and Technology (KUST), Kohat, 26000, Pakistan
  • [ 5 ] [Yi, Z.]State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
  • [ 6 ] [Wu, B.]Multiscale Computational Materials Facility, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350100, China

Reprint 's Address:

  • [Yi, Z.]State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of SciencesChina

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Source :

Materials

ISSN: 1996-1944

Year: 2018

Issue: 2

Volume: 11

2 . 9 7 2

JCR@2018

3 . 1 0 0

JCR@2023

ESI HC Threshold:284

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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