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author:

He, Z. (He, Z..) [1] | Chen, K. (Chen, K..) [2] | Bai, J. (Bai, J..) [3] | Li, Y. (Li, Y..) [4]

Indexed by:

Scopus

Abstract:

A four quantum dots structure is designed. The influence of the interdot coupling strength, energy levels of quantum dots, magnetic flux and intradot Coulomb interactions on the conductance is discussed. An antiresonance point exactly emerges at the location of the energy level of side-coupled quantum dots (SCQD). The conversion between resonance band and antiresonance band can be achieved as parallel-coupled di-quantum dots with or without SCQD, which suggests a physical scheme of an effective quantum switch. The Breit-Wigner resonant and Fano antiresonant peaks may merge into one resonant band. By means of the mathematical formula, we analyze how the resonance band is formed. By varying intradot Coulomb interaction, the resonance band may evolve into a Fano antiresonance with an ultra-narrow width. This study provides theoretical basis for the design of quantum computing devices. © 2019 World Scientific Publishing Company.

Keyword:

Non-equilibrium Green's function; quantum dot; quantum switch; resonance band

Community:

  • [ 1 ] [He, Z.]School of Electronic and Information Engineering, Yangtze Normal University, Chongqing, 408003, China
  • [ 2 ] [He, Z.]Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
  • [ 3 ] [Chen, K.]College of Materials Science and Engineering, Fuzhou University, Fuzhou, Fujian, 350108, China
  • [ 4 ] [Bai, J.]School of Electronic and Information Engineering, Yangtze Normal University, Chongqing, 408003, China
  • [ 5 ] [Li, Y.]School of Electronic and Information Engineering, Yangtze Normal University, Chongqing, 408003, China

Reprint 's Address:

  • [He, Z.]School of Electronic and Information Engineering, Yangtze Normal UniversityChina

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Source :

Modern Physics Letters B

ISSN: 0217-9849

Year: 2019

Issue: 34

Volume: 33

1 . 2 2 4

JCR@2019

1 . 8 0 0

JCR@2023

ESI HC Threshold:138

JCR Journal Grade:3

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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