• Complex
  • Title
  • Keyword
  • Abstract
  • Scholars
  • Journal
  • ISSN
  • Conference
成果搜索

author:

Chen, Q. (Chen, Q..) [1] | Yan, Y. (Yan, Y..) [2] | Wu, X. (Wu, X..) [3] | Lan, S. (Lan, S..) [4] | Hu, D. (Hu, D..) [5] | Fang, Y. (Fang, Y..) [6] | Lv, D. (Lv, D..) [7] | Zhong, J. (Zhong, J..) [8] | Chen, H. (Chen, H..) [9] | Guo, T. (Guo, T..) [10]

Indexed by:

Scopus

Abstract:

In this work, a novel vertical quantum-dot light-emitting transistor (VQLET) based on a vertical organic thin-film transistor is successfully fabricated. Benefiting from the new vertical architecture, the VQLET is able to afford an extremely high current density, which allows most of the organic thin film transistors (OTFT) even with low mobility (for instance, poly(3-hexylthiophene)) to drive a quantum-dot light-emitting diode (QLED), which was previously unavailable. Moreover, the hole injection barrier could be modulated by the additional gate electrode, which precisely optimizes the charge balance in the device, a critical issue in QLED, resulting in the precise control of current density and brightness of the VQLET. The VQLET shows a high performance with a maximum current efficiency of 37 cd/A. Furthermore, integrating OTFT and QLED into a single device, the VQLET features drastic advantages by realizing active matrix quantum-dot light-emitting diodes (AMQLEDs), which significantly reduces the number of transistors and frees the large area fraction occupied by transistors. Hence, these results indicate that the VQLET provides a new strategy for realizing a low-cost, solution-processed, high-performance OTFT-AMQLED for the flat panel display technology. Moreover, the novel design offers a unique method to exquisitely control the charge balance and maximize the efficiency the QLED. © 2019 American Chemical Society.

Keyword:

active matrix displays; charge balance; organic transistors; quantum-dot light-emitting diodes; vertical transistors

Community:

  • [ 1 ] [Chen, Q.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 2 ] [Yan, Y.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 3 ] [Wu, X.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 4 ] [Lan, S.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 5 ] [Hu, D.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 6 ] [Fang, Y.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 7 ] [Lv, D.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 8 ] [Zhong, J.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 9 ] [Chen, H.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 10 ] [Guo, T.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China

Reprint 's Address:

  • [Chen, H.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou UniversityChina

Show more details

Related Keywords:

Related Article:

Source :

ACS Applied Materials and Interfaces

ISSN: 1944-8244

Year: 2019

Issue: 39

Volume: 11

Page: 35888-35895

8 . 7 5 8

JCR@2019

8 . 5 0 0

JCR@2023

ESI HC Threshold:236

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 30

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

Affiliated Colleges:

Online/Total:212/10012422
Address:FZU Library(No.2 Xuyuan Road, Fuzhou, Fujian, PRC Post Code:350116) Contact Us:0591-22865326
Copyright:FZU Library Technical Support:Beijing Aegean Software Co., Ltd. 闽ICP备05005463号-1