All-solution-processed high-performance quantum dot light emitting devices employing an inorganic thiocyanate as hole injection layer - Details

author：

Indexed by：

Scopus

Abstract：

We　report　here　the　all-solution-processed,　high-efficiency　quantum　dot　light　emitting　diode　(QLED)　employing　inorganic　copper　(I)　thiocyanate　(CuSCN)　as　hole　injection　layer.　In　comparison　with　the　widely　used　injection　material　of　poly(3,4-ethylenedioxythiophene):　poly(styrene　sulfonate)　(PEDOT:PSS),　the　hole　injection　into　the　QD　layer　is　significantly　improved,　allowing　low　turn-on　voltage,　high　luminance　and　efficiency.　By　optimizing　the　multilayer　structure　and　synergistically　balancing　the　carrier　injection,　the　resulting　QLEDs　exhibit　high　performance　with　the　maximum　current　efficiency　of　52.4　cd/A　and　external　quantum　efficiency　of　12.0%　for　green　device,　17.0　cd/A　and　16.2%　for　red　device.　These　results　indicate　that　CuSCN　is　a　reliable　hole　transport　materials　for　low-cost,　high-efficiency　QLED　devices.　©　2019　Elsevier　B.V.

Keyword：

All-solution-processed; Copper (I) thiocyanate; Light-emitting diodes; Quantum dots

Community：

[ 1 ] [Zhu, Y.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
[ 2 ] [Hu, H.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
[ 3 ] [Liu, Y.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
[ 4 ] [Chen, M.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
[ 5 ] [Lin, W.]MOE Key Laboratory for Analytical Science of Food Safety and Biology, Fuzhou University, Fuzhou, 350116, China
[ 6 ] [Ye, Y.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
[ 7 ] [Guo, T.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
[ 8 ] [Li, F.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China

Reprint 's Address：

[Hu, H.]Institute of Optoelectronic Technology, Fuzhou UniversityChina

Email：

huhl@fzu.edu.cn

Show more details

Related Keywords：

Source ：

Organic Electronics

ISSN： 1566-1199

Year： 2019

Volume： 70

Page： 279-285

3 . 3 1

JCR@2019

2 . 7 0 0

JCR@2023

ESI HC Threshold：138

JCR Journal Grade：2

CAS Journal Grade：3

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 18

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 1

Affiliated Colleges：

Get Fulltext

DOI Library Discovery Baidu Scholar Search SCOPUS

Type
Departments

All Years Choose Year From to