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author:

Yan, Y. (Yan, Y..) [1] | Wu, X. (Wu, X..) [2] | Chen, Q. (Chen, Q..) [3] | Liu, Y. (Liu, Y..) [4] | Chen, H. (Chen, H..) [5] | Guo, T. (Guo, T..) [6]

Indexed by:

Scopus

Abstract:

The identifying characteristic of an organic electrochemical transistor (OECT) is the coupling between ionic and electronic charges within the entire volume of the channel. In this work, by taking advantage of the volumetric nature of the OECTs' response, a novel flexible photodetector is reported for the first time based on all-solid-state OECT with an excellent responsivity of up to 6.7 × 106 A/W, detectivity as high as 3.6 × 1013 Jones, and a fast response of 0.13 s in the visible range, which are superior to those of the majority of the reported organic phototransistors (OPTs) based on field-effect transistors (FETs) and even better than those of FET-based phototransistors with two-dimensional (MoS2 and graphene) and perovskite materials. The high performance of the devices was ascribed to the combination of the higher carrier mobility of poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS) as a channel and the volumetric nature of the OECTs' response, and the charge density of the volumetric channel was efficiently modulated by incident light compared to FETs. Moreover, OECT-based OPTs with quantum dots (CdSe/ZnS) as a light sensitizer were characterized under ultraviolet light, and they exhibited excellent photosensitivity, which further verified the superiority of OECT for phototransistors. Furthermore, a flexible image sensor was fabricated for the first time by integrating flexible OECTs-OPTs into a 10 × 10 array, which can clearly identify the target image under a bending state, indicating the great potential of OECTs-OPTs in the application of low-power, ultrasensitive flexible photodetectors and imaging technology. © 2019 American Chemical Society.

Keyword:

flexible; image sensor; low voltage; organic electrochemical transistors; organic phototransistors; volumetric transport

Community:

  • [ 1 ] [Yan, Y.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 2 ] [Wu, X.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 3 ] [Chen, Q.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 4 ] [Liu, Y.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 5 ] [Chen, H.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 6 ] [Guo, T.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China

Reprint 's Address:

  • [Chen, H.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou UniversityChina

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Source :

ACS Applied Materials and Interfaces

ISSN: 1944-8244

Year: 2019

Issue: 22

Volume: 11

Page: 20214-20224

8 . 7 5 8

JCR@2019

8 . 5 0 0

JCR@2023

ESI HC Threshold:236

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 48

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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