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author:

Di, Girolamo, D. (Di, Girolamo, D..) [1] | Matteocci, F. (Matteocci, F..) [2] | Kosasih, F.U. (Kosasih, F.U..) [3] | Chistiakova, G. (Chistiakova, G..) [4] | Zuo, W. (Zuo, W..) [5] | Divitini, G. (Divitini, G..) [6] | Korte, L. (Korte, L..) [7] | Ducati, C. (Ducati, C..) [8] | Di, Carlo, A. (Di, Carlo, A..) [9] | Dini, D. (Dini, D..) [10] | Abate, A. (Abate, A..) [11]

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Scopus

Abstract:

In perovskite solar cells (PSCs), the interfaces are a weak link with respect to degradation. Electrochemical reactivity of the perovskite's halides has been reported for both molecular and polymeric hole selective layers (HSLs), and here it is shown that also NiO brings about this decomposition mechanism. Employing NiO as an HSL in p–i–n PSCs with power conversion efficiency (PCE) of 16.8%, noncapacitive hysteresis is found in the dark, which is attributable to the bias-induced degradation of perovskite/NiO interface. The possibility of electrochemically decoupling NiO from the perovskite via the introduction of a buffer layer is explored. Employing a hybrid magnesium-organic interlayer, the noncapacitive hysteresis is entirely suppressed and the device's electrical stability is improved. At the same time, the PCE is improved up to 18% thanks to reduced interfacial charge recombination, which enables more efficient hole collection resulting in higher Voc and FF. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Keyword:

hysteresis; interface engineering; NiO; perovskite solar cells; stability

Community:

  • [ 1 ] [Di Girolamo, D.]Department of Chemistry, University of Rome La Sapienza, Piazzale Aldo Moro 5, Rome, 00185, Italy
  • [ 2 ] [Matteocci, F.]C.H.O.S.E.—Centre for Hybrid and Organic Solar Energy, Department of Electronic Engineering, University of Rome Tor Vergata, Via del politecnico 1, Rome, 00133, Italy
  • [ 3 ] [Kosasih, F.U.]Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
  • [ 4 ] [Chistiakova, G.]Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institute for Silicon Photovoltaics, Kekuléstraße 5, Berlin, D-12489, Germany
  • [ 5 ] [Zuo, W.]Department of Chemistry, University of Rome La Sapienza, Piazzale Aldo Moro 5, Rome, 00185, Italy
  • [ 6 ] [Divitini, G.]Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
  • [ 7 ] [Korte, L.]Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institute for Silicon Photovoltaics, Kekuléstraße 5, Berlin, D-12489, Germany
  • [ 8 ] [Ducati, C.]Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
  • [ 9 ] [Di Carlo, A.]C.H.O.S.E.—Centre for Hybrid and Organic Solar Energy, Department of Electronic Engineering, University of Rome Tor Vergata, Via del politecnico 1, Rome, 00133, Italy
  • [ 10 ] [Di Carlo, A.]L.A.S.E.—Laboratory of Advanced Solar Energy, National University of Science and Technology NUST-MISiS, Leninskiy prospect 6, Moscow, 119049, Russian Federation
  • [ 11 ] [Dini, D.]Department of Chemistry, University of Rome La Sapienza, Piazzale Aldo Moro 5, Rome, 00185, Italy
  • [ 12 ] [Abate, A.]Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institute for Silicon Photovoltaics, Kekuléstraße 5, Berlin, D-12489, Germany
  • [ 13 ] [Abate, A.]State Key Laboratory of Photocatalysis on Energy and Environment Institute of Advanced Energy Materials, Fuzhou University, Fuzhou, Fujian 350002, China
  • [ 14 ] [Abate, A.]Department of Chemical, Materials and Production Engineering, University of Naples Federico II, Piazzale Tecchio 80, Fuorigrotta, Naples, 80125, Italy

Reprint 's Address:

  • [Abate, A.]Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institute for Silicon Photovoltaics, Kekuléstraße 5, Germany

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Source :

Advanced Energy Materials

ISSN: 1614-6832

Year: 2019

Issue: 31

Volume: 9

2 5 . 2 4 5

JCR@2019

2 4 . 4 0 0

JCR@2023

ESI HC Threshold:236

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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