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author:

Zheng, Y.-T. (Zheng, Y.-T..) [1] | Zheng, X. (Zheng, X..) [2] | Hu, H.-L. (Hu, H.-L..) [3] | Guo, T.-L. (Guo, T.-L..) [4] | Lin, J.-T. (Lin, J.-T..) [5] | Li, F.-S. (Li, F.-S..) [6]

Indexed by:

Scopus PKU CSCD

Abstract:

In recent years, metal halide perovskites have become new promising materials in the field of optoelectronic applications due to the advantages of high optical absorption coefficient, high color purity, wide color gamut, continuously adjustable luminescence wavelength, high photoluminescence quantum yield, large carrier diffusion length, stable ingredients and not easy to decompose, and have excellent performance in solar cells, light-emitting diodes, memristors, lasers, photodetectors and anti-counterfeiting labels. Furthermore, perovskites can be made by simple methods like solution synthesis, which provides the possibility of combining it with the printing process, large-scale production and industrialization. In this experiment, solution-processed CsPbBr3 perovskite films grown in situ have a preferred orientation on the (100) crystal plane, and its interplanar spacing is smaller than the value from PDF standard card. As the concentration of precursor increases, the morphological structure of samples varied, continuity and compactness of films were improved, crystal grains were refined, the photoluminescence(PL) intensity excited by light at 375 nm was approximately 5 times original, the PL peak position blue shifted by 6 nm, and the lattice distortion caused by this process increased the full width at half maximum(FWHM) of the PL spectrum by more than 2 nm. © 2020, Science Press. All right reserved.

Keyword:

In situ growth; Luminescence characteristics; Perovskite; Precursor concentration; Structure characteristics

Community:

  • [ 1 ] [Zheng, Y.-T.]National and Local Joint Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 2 ] [Zheng, X.]National and Local Joint Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 3 ] [Hu, H.-L.]National and Local Joint Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 4 ] [Guo, T.-L.]National and Local Joint Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 5 ] [Lin, J.-T.]National and Local Joint Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 6 ] [Li, F.-S.]National and Local Joint Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China

Reprint 's Address:

  • [Li, F.-S.]National and Local Joint Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou UniversityChina

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Source :

Chinese Journal of Luminescence

ISSN: 1000-7032

Year: 2020

Issue: 7

Volume: 41

Page: 775-781

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 2

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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