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this paper reported the effect of SiO2 on the silicon-on-glass anodic bonding theoretically and experimentally for the first time. Silicon glass bonding mechanism based on soft break-down of SiO2 is established and demonstrated. The electrical model of Si-SiO2-Glass anodic bonding stated clearly that anodic bonding voltage must be higher than the break-down voltage of SiO2 to start bonding. The break-down voltage of SiO2 is proportional to its thickness. Bonding strength is finally extracted by a customized on-chip testing device. It is found that the thin SiO2 layer on the silicon surface affects the bonding strength seriously. The bonding strength of anodic bonding with SiO2 layer is 25% stronger than that of typical Si-Glass anodic bonding near the periphery of the silicon wafer, and 8% stronger than that of typical Si-Glass anodic bonding in the central region of the silicon wafer. © 2019 IEEE.
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Proceedings of the IEEE Conference on Nanotechnology
ISSN： 1944-9399
Year： 2019
Volume： 2019-July
Page： 19-22
Language： English
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ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 0
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